Zobrazeno 1 - 10
of 42
pro vyhledávání: '"N. Medelci"'
Publikováno v:
Journal of Electronic Materials. 29:1079-1083
Reactive ion etching (RIE) was performed on GaN and BN thin films using chlorine-based plasmas. The optimum chemistry was found to be BCl3/Cl2/N2/Ar and Cl2/Ar at 30 and 40 mtorr for GaN and BN etching, respectively. X-ray photoelectron spectroscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a10461f465a40a508e292245fbeaf98
https://doi.org/10.1007/s11664-004-0268-6
https://doi.org/10.1007/s11664-004-0268-6
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:1130-1134
We demonstrate the selective area growth of GaN on SiO2-masked AlN/Si(111) and GaN/AlN/Si(111) wafers by chemical beam epitaxy (CBE) using triethyl gallium and ammonia. We investigated the selective nucleation process on Si wafers with oxide and nitr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20d54a5ac7d5c42327fc700078c5c4fa
https://doi.org/10.1116/1.582311
https://doi.org/10.1116/1.582311
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:2209-2213
Gallium nitride (GaN) and boron nitride (BN) are known as superior semiconductor materials for UV optoelectronic and high power, high temperature applications. As a result of their high molecular bond strength these materials are extremely difficult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9b2a198ec442fc620f9632dedfcb557
https://doi.org/10.1116/1.581748
https://doi.org/10.1116/1.581748
Publikováno v:
Journal of Crystal Growth. 164:465-469
We report, for the first time, an epitaxially grown InP p + /n ++ tunnel junction. A diode with peak current densities up to 1600 A/cm 2 and maximum specific resistivities (V p /l p peak voltage to peak current ratio) in the range of 10 -4 Ω.cm 2 is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35656a91f931f5c815f4f2eebeda17bc
https://doi.org/10.1016/0022-0248(95)01024-6
https://doi.org/10.1016/0022-0248(95)01024-6
Publikováno v:
2008 33rd IEEE Photovolatic Specialists Conference.
In this work we present the design, fabrication and characterization of 2.3 eV InGaN-based solar cells confirming the feasibility of high indium content III-Nitride materials for photovoltaics. Growth of single phase In x Ga 1-x N for x up to 0.4 is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9191138a8b3f2d7418a3634079883f2
https://doi.org/10.1109/pvsc.2008.4922693
https://doi.org/10.1109/pvsc.2008.4922693
Publikováno v:
Proceedings of the Second Joint 24th Annual Conference and the Annual Fall Meeting of the Biomedical Engineering Society] [Engineering in Medicine and Biology.
Significant efforts have been made lately towards transforming the large and costly laboratory fluorescence measurement systems to compact portable fluorometers based on solid-state light emitting diodes (LEDs) and photodiodes. UV/blue LEDs and filte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a219bf6dfe2cb2ab83ded3276b95c71
https://doi.org/10.1109/iembs.2002.1106596
https://doi.org/10.1109/iembs.2002.1106596
Publikováno v:
MRS Internet Journal of Nitride Semiconductor Research. 8
Reactive Ion Etching (RIE) and Photo-Assisted RIE (PA-RIE) induced damage in GaN using simple Schottky structures and a BCl3/Cl2/N2gas mixture have been investigated. Schottky diode I-V characteristics following different RF powers and exposure times
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::524a7dcac84dc8799182a92f4ed67d71
https://doi.org/10.1557/s1092578300000508
https://doi.org/10.1557/s1092578300000508
Publikováno v:
1993 (5th) International Conference on Indium Phosphide and Related Materials.
High performance In/sub 0.47/Ga/sub 0.53/As tunnel junctions were successfully realized using chemical beam epitaxy on InP, GaAs and GaAs/Si substrates. The achievement of high performance tunnel junctions, besides extremely high hole and electron co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::610a9fda8de0b650f65de205f9f502ff
https://doi.org/10.1109/iciprm.1993.380669
https://doi.org/10.1109/iciprm.1993.380669
Publikováno v:
Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9).
For the first time high quality In/sub 0.53/Ga/sub 0.47/As tunnel junctions were grown at relatively low temperatures (450/spl deg/C to 530/spl deg/C) using chemical beam epitaxy (CBE). p/sup ++n/sup ++/ In/sub 0.53/Ga/sub 0.47/As tunnel junctions we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84ecd9b02e32e41a9a5f6651259ec710
https://doi.org/10.1109/pvsc.1993.347017
https://doi.org/10.1109/pvsc.1993.347017
Publikováno v:
Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC).
We present the first experimental investigation of InP based-multiquantum well (MQW) solar cells. Lattice matched In/sub 0.47/Ga/sub 0.53/As/InP and strained InAs/sub x/P/sub 1-x//InP (x=0.3 to 0.7) multiquantum wells were introduced in the intrinsic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4eb5ad90babb15b97f5f75c9c415ef3
https://doi.org/10.1109/wcpec.1994.520735
https://doi.org/10.1109/wcpec.1994.520735