Zobrazeno 1 - 10
of 39
pro vyhledávání: '"N. Mauran"'
Autor:
L. Schwab, P. E. Allain, N. Mauran, X. Dollat, L. Mazenq, D. Lagrange, M. Gély, S. Hentz, G. Jourdan, I. Favero, B. Legrand
Publikováno v:
Microsystems & Nanoengineering, Vol 8, Iss 1, Pp 1-14 (2022)
Abstract Atomic force microscopy (AFM) has been consistently supporting nanosciences and nanotechnologies for over 30 years and is used in many fields from condensed matter physics to biology. It enables the measurement of very weak forces at the nan
Externí odkaz:
https://doaj.org/article/be26b9d481b84e2ba0dd6fd34846fdde
Publikováno v:
Microelectronics Reliability
Microelectronics Reliability, 2023, 144, pp.114955. ⟨10.1016/j.microrel.2023.114955⟩
Microelectronics Reliability, 2023, 144, pp.114955. ⟨10.1016/j.microrel.2023.114955⟩
International audience; In reliability studies, the instability of the threshold voltage (Vth) is problematic when Vth is used as an indicator as it totally blurs an eventual drift due to real device aging. This instability is observed during electri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1cb96c801ba33474e7adeb50754e1ddd
https://hal.science/hal-04049626
https://hal.science/hal-04049626
Autor:
L. Schwab, P. E. Allain, N. Mauran, X. Dollat, L. Mazenq, D. Lagrange, M. Gély, S. Hentz, G. Jourdan, I. Favero, B. Legrand
Publikováno v:
Microsystems & Nanoengineering
Microsystems & Nanoengineering, 2022, 8, pp.32. ⟨10.1038/s41378-022-00364-4⟩
Microsystems & Nanoengineering, 2022, 8, pp.32. ⟨10.1038/s41378-022-00364-4⟩
Atomic force microscopy (AFM) has been consistently supporting nanosciences and nanotechnologies for over 30 years and is used in many fields from condensed matter physics to biology. It enables the measurement of very weak forces at the nanoscale, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbda7d75757b3e46a2801f7bb290a1a5
https://hal.archives-ouvertes.fr/hal-03326075/document
https://hal.archives-ouvertes.fr/hal-03326075/document
Akademický článek
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Akademický článek
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Publikováno v:
Journal of Microelectromechanical Systems. 17:832-836
A nano initiator is developed by integrating Al/CuO-based nanoenergetic materials with a Au/Pt/Cr thin-film microheater realized onto a glass substrate. It is fabricated by using standard microsystem techniques that allow batch fabrication and high l
Autor:
Corinne Alonso, Monique Dilhan, J.-L. Sanchez, Philippe Artillan, N. Mauran, David Bourrier, B. Estibals, M. Brunet, L. Bary, Jean-Pierre Laur
Publikováno v:
IEEE Transactions on Power Electronics
IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2011, 26 (8), pp.2319-2325. ⟨10.1109/TPEL.2010.2102776⟩
IEEE Transactions on Power Electronics, 2011, 26 (8), pp.2319-2325. ⟨10.1109/TPEL.2010.2102776⟩
IEEE Transactions on Power Electronics, Institute of Electrical and Electronics Engineers, 2011, 26 (8), pp.2319-2325. ⟨10.1109/TPEL.2010.2102776⟩
IEEE Transactions on Power Electronics, 2011, 26 (8), pp.2319-2325. ⟨10.1109/TPEL.2010.2102776⟩
International audience; The integration of passive components on silicon for future DC-DC converters applications is still a challenging area of research. This paper reports the microfabrication of a fully integrated filter containing a spiral induct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e25cdc665bad566066ef6e5ac5e8928
https://hal.archives-ouvertes.fr/hal-01443073
https://hal.archives-ouvertes.fr/hal-01443073
Publikováno v:
IEEE Electron Device Letters
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2009, 30 (6), pp.687-689. ⟨10.1109/LED.2009.2020348⟩
IEEE Electron Device Letters, 2009, 30 (6), pp.687-689. ⟨10.1109/LED.2009.2020348⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2009, 30 (6), pp.687-689. ⟨10.1109/LED.2009.2020348⟩
IEEE Electron Device Letters, 2009, 30 (6), pp.687-689. ⟨10.1109/LED.2009.2020348⟩
International audience; A new junction termination for high-voltage devices using a deep trench filled with dielectric, which dramatically decreases the junction-termination area, is proposed and fabricated. The termination breakdown voltage dependen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::921c62b342d7a6c017e8acb6801fd7ee
https://hal.archives-ouvertes.fr/hal-00991660
https://hal.archives-ouvertes.fr/hal-00991660
RF MEMS are commonly known as electrostatic devices using high electric field for their actuation. They can be exposed to transient voltages in any environment, and are very sensitive. According to this point of view, it is necessary to understand an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2127::c6365594d5745710f63764982979620b
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3037162
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3037162
Autor:
Laurent Bary, N. Mauran, Dominique Michau, Robert Plana, G. Leclerc, M. Brunet, M. Al Ahmad, Mario Maglione, Sandrine Payan
Publikováno v:
2007 Asia-Pacific Microwave Conference.
The rapid growth of communication systems demand for wide tunable low loss microwave components. Barium strontium titanate (BST) voltage dependent permittivity has shown a great potential impact for the fabrication of frequency agile components. In t