Zobrazeno 1 - 10
of 31
pro vyhledávání: '"N. Mainzer"'
Autor:
E. Zolotoyabko, N. Mainzer
Publikováno v:
Defect and Diffusion Forum. :103-126
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b64351b0c82e1146d164126955360a3c
https://doi.org/10.4028/www.scientific.net/ddf.183-185.103
https://doi.org/10.4028/www.scientific.net/ddf.183-185.103
Autor:
N. Mainzer, Emil Zolotoyabko
Publikováno v:
Journal of Electronic Materials. 29:792-797
We used high-resolution x-ray diffraction to measure precisely structural modifications in variously composed Hg1−xCdxTe layers which were fabricated by different growth techniques and subjected to boron implantation to form p-n junctions. Analysis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0170850a3882271137f02dfe80a34776
https://doi.org/10.1007/s11664-000-0226-x
https://doi.org/10.1007/s11664-000-0226-x
Autor:
Emil Zolotoyabko, N. Mainzer
Publikováno v:
Physical Review B. 60:16715-16721
Using high-resolution x-ray diffraction for precise measurements of structural modifications in boron-implanted ${\mathrm{Hg}}_{1\ensuremath{-}x}{\mathrm{Cd}}_{x}\mathrm{Te}$ layers, we found a percolation problem in the long-range diffusion of Cd in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22cecae88d9de09b7be43378192ec33a
https://doi.org/10.1103/physrevb.60.16715
https://doi.org/10.1103/physrevb.60.16715
Publikováno v:
Journal of Electronic Materials. 28:850-853
Absolute values of lattice parameters in Hg1−xCdxTe epilayers were precisely measured by high-resolution x-ray diffraction (Bond method), and then compared with those calculated using Cd contents, x, which were derived from Fourier transform infrar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02a0cd176edcd3b58eb4805e6bed2413
https://doi.org/10.1007/s11664-999-0082-2
https://doi.org/10.1007/s11664-999-0082-2
Publikováno v:
Journal of Crystal Growth. :264-269
The ability of high-resolution X-ray diffraction to provide information on atomic diffusion is analyzed, the focus being on the thin film crystalline structures important to modern microelectronics and optoelectronics. Special attention is paid to th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5e8022ce2ddd32898d84e600695d07c
https://doi.org/10.1016/s0022-0248(98)00981-6
https://doi.org/10.1016/s0022-0248(98)00981-6
Publikováno v:
Journal of Crystal Growth. 197:542-546
Structural and compositional parameters of the Hg 1-x Cd x Te layers grown by metal-organic vapor deposition on (2 1 1)-oriented CdTe substrates were investigated by high-resolution X-ray diffraction, high-resolution scanning electron microscopy, ene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8716f983decb6dd7efe2f56c40184201
https://doi.org/10.1016/s0022-0248(98)00748-9
https://doi.org/10.1016/s0022-0248(98)00748-9
Publikováno v:
Journal of Applied Physics. 82:2869-2876
A novel method to obtain diffusion-controlled atomic concentration profiles in II–VI semiconductor heterostructures has been developed using high-resolution x-ray diffraction. Measured diffraction spectra are compared with simulations based on dire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cb2b0f4b68c593b8caeffbae044db76
https://doi.org/10.1063/1.366119
https://doi.org/10.1063/1.366119
Publikováno v:
Journal of Electronic Materials. 26:606-609
CdTe/Hg1−xCdxTe heterostructures variously heat-treated and implanted with boron were studied by means of high-resolution x-ray diffraction. A novel procedure for simulating diffraction spectra was developed, which is based on direct summation of s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c94f19f56243d529f5296177c74a8756
https://doi.org/10.1007/s11664-997-0202-9
https://doi.org/10.1007/s11664-997-0202-9
Publikováno v:
Journal of Electronic Materials. 24:1169-1174
In this study, CdTe epilayers were grown by metalorganic chemical vapor deposition on epitaxial HgCdTe with the purpose of developing suitable passivation for HgCdTe photodiodes. Two types of CdTe layers were investigated. One was grown directly,in s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb34912c1a9b02b001710d1efa134b06
https://doi.org/10.1007/bf02653070
https://doi.org/10.1007/bf02653070
Publikováno v:
Journal of Electronic Materials. 24:1161-1168
The metalorganic chemical vapor deposition (MOCVD) growth of CdTe on bulk n-type HgCdTe is reported and the resulting interfaces are investigated. Metalinsulator-semiconductor test structures are processed and their electrical properties are measured
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68b6c8d82545ee5e2032d59c606324ed
https://doi.org/10.1007/bf02653069
https://doi.org/10.1007/bf02653069