Zobrazeno 1 - 10
of 46
pro vyhledávání: '"N. Maene"'
Publikováno v:
Microelectronics Reliability. 38:1733-1739
At present, submicron technologies, electrostatic discharges (ESD) are one of the major threats to the reliability of ICs. The aim of this paper is to demonstrate that a very good ESD protection level can be achieved provided we can insure a uniform
Publikováno v:
Microelectronics Reliability. 37:1537-1540
In nowadays submicron technologies, Electrostatic Discharges (ESD) are one of the major threat for the reliability of ICs. The aim of this paper is to demonstrate that a very good ESD protection level can be achieved provided we can insure a uniform
Publikováno v:
Physical Review E. 55:4675-4683
Smith-Purcell radiation is produced when a charged particle moves parallel and close to a diffraction grating. We extend previous descriptions of the phenomenon by considering a particle moving parallel to the grating surface at an arbitrary angle wi
Publikováno v:
Proteins: Structure, Function, and Genetics. 20:330-346
The structures of two crystal forms of lentil lectin are determined and refined at high resolution. Orthorhombic lentil lectin is refined at 1.80 A resolution to anR-factor of 0.184 and monoclinic lentil lectin at 1.75 A resolution to anR-factor of 0
Publikováno v:
Microelectronics Reliability. 32:1545-1550
In this paper several on-chip electrostatic discharge (ESD) protections for inputs, outputs and supply pins are discussed. By comparing different structures, insight has been attained in the most important parameters determining the ESD sensitivity,
Autor:
Philippe Jansen, Walter De Raedt, S. Naten, K. De Meyer, M. Van Rossum, Wim Schoenmaker, D. Stubbe, N. Maene
Publikováno v:
European Transactions on Telecommunications. 1:433-437
The two-dimensional device simulator PRISM (PRogram for Investigating Semiconductor Models) [1], which is a general purpose device simulator, has been adapted to simulate III-V heterojunction FET's [2]. PRISM can now simulate silicon devices (as MOSF
Autor:
N. Maene, H. Richter, J. Hanseler, E. Janssens, T. Brenner, J. le Ber, S. Lindenkreuz, G. Morin
Publikováno v:
ICMTS 92 Proceedings of the 1992 International Conference on Microelectronic Test Structures.
A CMOS 0.7- mu m test chip for technology and model parameter measurements and reliability testing is presented. The basic concept is based on well-defined standardized modules with fixed sizes. It was designed by eight European companies with common
Publikováno v:
12th International Conference on High-Power Particle Beams. BEAMS'98. Proceedings (Cat. No.98EX103).
The production of quasi-monochromatic light by relativistic electrons impinging on the surface of an optical grating is investigated at electron energies between 3 and 120 MeV. In analogy to Smith-Purcell (SP) radiation generated by electrons travell
Publikováno v:
Physical Review E : Statistical, Nonlinear, and Soft Matter Physics
Physical Review E : Statistical, Nonlinear, and Soft Matter Physics, American Physical Society, 1999, 60 (5), pp.6214-6217. ⟨10.1103/PhysRevE.60.6214⟩
Physical Review E : Statistical, Nonlinear, and Soft Matter Physics, American Physical Society, 1999, 60 (5), pp.6214-6217. ⟨10.1103/PhysRevE.60.6214⟩
International audience; We have observed transition radiation at optical wavelengths, emitted by 3-13-MeV electrons interacting with a diffraction grating. Near the direction of specular reflection we observed broadband radiation with the same proper
Publikováno v:
Proceedings Electrical Overstress/Electrostatic Discharge Symposium.