Zobrazeno 1 - 3
of 3
pro vyhledávání: '"N. M. Igonina"'
Publikováno v:
Physica Status Solidi (a). 84:171-177
The depth distribution of As, Sb, and In atoms ion-implanted into silicon is studied with the helium ion backscattering technique after the action of a pulsed electron beam. It is shown that the impurity diffusion coefficients Di, when using electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8196978a67e8fe4b53bdda1932700e5
https://doi.org/10.1002/pssa.2210840121
https://doi.org/10.1002/pssa.2210840121
Publikováno v:
physica status solidi (a). 72:301-304
The distribution profiles of impurities (P, As, Sb) implanted into silicon are studied with the back scattering technique, measurements of sheet resistivity and Hall effect in combination with anodic oxidation and subsequent etching of an oxide in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a38286ea3176483b9c91b99b1f89b40f
https://doi.org/10.1002/pssa.2210720130
https://doi.org/10.1002/pssa.2210720130
