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pro vyhledávání: '"N. M. Heller"'
Autor:
Yu. V. Rud, Yu. A. Nikolaev, E. I. Terukov, N. M. Heller, A. G. Ivanov, V. V. Shamanin, V. Yu. Rud
Publikováno v:
Semiconductors. 44:354-358
An athermal nonvacuum technology was suggested and implemented, and nonclassically polyconjugated polydisalicylidene azomethyne/Si(GaAs) heterojunctions were fabricated for the first time. It was found that the highest photosensitivity of these heter
Publikováno v:
Semiconductors. 42:1338-1341
Photosensitive properties of new metal-containing polydisalicylidene azomethines were studied. It was shown that polymer properties are controlled by the nature of the metal atom (its electron affinity energy Aa and ionic radius ri) included in “no