Zobrazeno 1 - 4
of 4
pro vyhledávání: '"N. M. Haegel"'
Publikováno v:
APL Materials, Vol 11, Iss 6, Pp 061109-061109-7 (2023)
Epitaxial growth of the three-dimensional topological semimetal Cd3As2 on semiconductor substrates enables its use and integration in device applications. Epitaxy also provides an avenue for varying and controlling point defects through modification
Externí odkaz:
https://doaj.org/article/48c09c8aeef345a9bb5ac82c05209e1c
Publikováno v:
Journal of Applied Physics. 76:3032-3040
The spatial variation of stress tensor in selective‐area metalorganic chemical‐vapor‐ deposition‐grown GaAs on Si substrate by using a linearly polarized cathodoluminescence (CL) technique has been examined. The polarized CL technique enables
Autor:
M. Müllenborn, N. M. Haegel
Publikováno v:
Journal of Applied Physics. 74:5748-5753
Recombination and generation at slightly mismatched heterojunctions under optical excitation conditions are investigated with a model based on the ambipolar diffusion equation. This model is used to fit experimental photoluminescence power dependenci
Autor:
N. M. Haegel, D. R. Luber
Publikováno v:
Journal of Applied Physics. 99:083508
We demonstrate a method for charge recombination imaging in the scanning electron microscope and employ this technique to directly image the two-dimensional projection of the generation volume as a function of electron energy and probe current. Using