Zobrazeno 1 - 10
of 10
pro vyhledávání: '"N. M. Gnuchev"'
Publikováno v:
2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech).
The paper presents a study of the phenomenon of low-threshold field electron emission from thin films deposited on doped silicon wafers. The performed experiments have confirmed that Mo islet films (as well as previously studied carbon ones) can yiel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35e2f7c815bf448b2d576eccfefcf8c5
https://doi.org/10.1109/eexpolytech50912.2020.9243993
https://doi.org/10.1109/eexpolytech50912.2020.9243993
Publikováno v:
Journal of Physics: Conference Series. 1851:012022
Thin-film semiconductor devices and functional metal-oxide-semiconductor structures have drawn attention as being applicable for on-chip electronics. Similar structures, however, were also reported to be promising as efficient sources of electrons. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abaa9e60710ce38653bf6c1678eb7e6f
https://doi.org/10.1088/1742-6596/1851/1/012022
https://doi.org/10.1088/1742-6596/1851/1/012022
Autor:
V.A. Filatov, V. Ye. Babyuk, N. M. Gnuchev, V. S. Osipov, P. G. Gabdullin, Alexander V. Arkhipov, I.S. Bizyaev, O. E. Kvashenkina
Publikováno v:
2018 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech).
Experiments have demonstrated that thin discontinuous Mo films deposited on oxidized Si wafers may possess the capability of low-field electron emission. For different samples with effective thickness 2–6 nm the emission threshold (macroscopic elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c055c069683ccf64b248af74cdb20202
https://doi.org/10.1109/eexpolytech.2018.8564430
https://doi.org/10.1109/eexpolytech.2018.8564430
Publikováno v:
Technical Physics Letters. 40:1065-1068
Emission properties of carbon films deposited on silicon substrates by magnetron sputtering have been studied. The structure of the films was varied by changing the substrate temperature. It was found that the best emission properties are obtained fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75f86005cb751ef64a49aa63630089a7
https://doi.org/10.1134/s1063785014120037
https://doi.org/10.1134/s1063785014120037
Autor:
Alexander V. Arkhipov, E. V. Budylina, N. M. Gnuchev, P. A. Shkitun, P. G. Gabdullin, O. E. Kvashenkina, A. N. Andronov
Publikováno v:
2017 30th International Vacuum Nanoelectronics Conference (IVNC).
Previous experiments have showed that carbon island films (quantum dots) at silicon can be capable of low-field electron emission. This paper presents new results of experiments on comparative characterization of emitting and non-emitting thin carbon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a2f647487d00731003b495b7e7c84f5
https://doi.org/10.1109/ivnc.2017.8051643
https://doi.org/10.1109/ivnc.2017.8051643
Autor:
Alexander Andronov, Alexander V. Arkhipov, Ekaterina Budylina, P. G. Gabdullin, Pavel Shkitun, O. E. Kvashenkina, N. M. Gnuchev
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36:02C108
Previous experiments have demonstrated that carbon nanoisland films (or disordered quantum-dot arrays) deposited on silicon wafers may possess the property of low-field electron emission. This paper presents our new work on comparative characterizati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::262f4550d07e3cf364b991063ec0398d
https://doi.org/10.1116/1.5009906
https://doi.org/10.1116/1.5009906
Autor:
N. M. Gnuchev, S. N. Davydov, A. E. Kravchik, V. V. Sokolov, V. V. Korablev, P. G. Gabdullin, V. B. Bondarenko
Publikováno v:
Technical Physics. 49:1360-1363
Powders prepared from nanoporous carbon are promising for creating cold emitters, which are essential to the development of reliable next-generation monitors. The results of an experimental study of the temperature and time dependences of the emissio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a422cf08927173dff3a91c65fdafb70
https://doi.org/10.1134/1.1809711
https://doi.org/10.1134/1.1809711
Autor:
N. M. Gnuchev, S. N. Davydov, P. G. Gabdullin, Alexandr Kravchik, S. I. Krel, Alexander V. Arkhipov
Publikováno v:
Journal of Nanomaterials, Vol 2014 (2014)
Influence of fabrication technology on field electron emission properties of nanoporous carbon (NPC) was investigated. Samples of NPC derived from different carbides via chlorination at different temperatures demonstrated similar low-field emission a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69b646ffb91d808770e57ab98125f0da
Autor:
S. I. Krel, D. E. Drobinin, Vera Protopopova, P. G. Gabdullin, Alexander V. Arkhipov, N. M. Gnuchev, Maxim V. Mishin
Publikováno v:
Journal of Nano- and Electronic Physics. 8:02058-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::548d31e4083d991b3b8beafbc7a06e58
https://doi.org/10.21272/jnep.8(2).02058
https://doi.org/10.21272/jnep.8(2).02058
Autor:
S. N. Davydov, Anton A. Arkhipov, P. G. Gabdullin, N. M. Gnuchev, V. B. Bondarenko, Andrey V. Maslevtsov
Publikováno v:
St. Petersburg Polytechnical University Journal: Physics and Mathematics. (4):306-315
A novel electron spectrometer has been designed to study low-voltage field-induced emission of nanostructures such as nanoporous carbon, nanotubes, nanodiamond and other carbon structures. The estimated high resolving power of the device is mainly ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ec7aa9dc01ec6318f1e6049d6bdd0e1