Zobrazeno 1 - 10
of 41
pro vyhledávání: '"N. M. Bogatov"'
Publikováno v:
Kontrol'. Diagnostika. :12-17
The comparative analysis of switching methods of transformation of phase information is carried out in work. Following the proposed classification, the advantages, disadvantages, and scope of the methods of low-frequency filtering and high-purity sam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b57c6125e1c44a7c4939b95d2135fa3
https://doi.org/10.14489/td.2022.10.pp.012-017
https://doi.org/10.14489/td.2022.10.pp.012-017
Autor:
L. R. Grigoryan, N. M. Bogatov
Publikováno v:
Kontrol'. Diagnostika. :28-34
These volumes explore method for the rapid assessment of the insulation resistance of underground pipelines in order to reduce the duration and complexity of route work in the process of electrometric inspection of utilities. The idea of the method i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ade848c7e537560aee94033ac374f2a
https://doi.org/10.14489/td.2020.07.pp.028-034
https://doi.org/10.14489/td.2020.07.pp.028-034
Publikováno v:
Semiconductors. 54:759-764
The growth of AlGaInSbAs solid solutions on InAs substrates from the liquid phase in a temperature-gradient field is discussed. The calculation of parameters is performed, and the luminescence properties and spectral characteristics of AlGaInSbAs sol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa503f9a28788a95f72d56d2385d286b
https://doi.org/10.1134/s1063782620070088
https://doi.org/10.1134/s1063782620070088
Autor:
F. A. Kolokolov, N. M. Bogatov, M. S. Kovalenko, A. I. Kovalenko, L. S. Lunin, L. R. Grigorian
Publikováno v:
Semiconductors. 54:196-200
Irradiation by low-energy products leads to a variation in the electrical, optical, and other properties of the surface layer of semiconductor structures, which gives additional possibilities to modify semiconductor devices. This work is devoted to i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::644c6e77629b15e040bcd749e6fb6c04
https://doi.org/10.1134/s1063782620020062
https://doi.org/10.1134/s1063782620020062
Autor:
N. M. Bogatov, A. N. Bogatova, S. A. Sukhih, L. R. Grigoryan, M. S. Kovalenko, A. A. Nosal, D. A. Schetinin
Publikováno v:
PROCEEDINGS OF THE II INTERNATIONAL SCIENTIFIC CONFERENCE ON ADVANCES IN SCIENCE, ENGINEERING AND DIGITAL EDUCATION: (ASEDU-II 2021).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fb774738e67a28adbaa29210cc3bc9e
https://doi.org/10.1063/5.0104207
https://doi.org/10.1063/5.0104207
Pulse Response Characteristics of Silicon Photovoltaic Converters Irradiated with Low-Energy Protons
Publikováno v:
Technical Physics Letters. 47:326-328
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4004376445d3ef0f09cff6fa9f9bcb04
https://doi.org/10.1134/s1063785021040040
https://doi.org/10.1134/s1063785021040040
Publikováno v:
Ecological Bulletin of Research Centers of the Black Sea Economic Cooperation. 16:59-65
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4025d676fe083e2c20ba777e8a3bcd3
https://doi.org/10.31429/vestnik-16-1-59-65
https://doi.org/10.31429/vestnik-16-1-59-65
Autor:
L. R. Grigoryan, N. M. Bogatov
Publikováno v:
Kontrol'. Diagnostika. :50-57
The paper discusses new circuit solutions in the practice of electrochemical protection of pipelines. The aim of the work is to develop methods for measuring the polarization potential between the two control and measuring points of the pipeline unde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13684a032def2efe471fa366ef62b942
https://doi.org/10.14489/td.2019.10.pp.050-057
https://doi.org/10.14489/td.2019.10.pp.050-057
Autor:
L. R. Grigor'yan, N. M. Bogatov
Publikováno v:
Measuring. Monitoring. Management. Control.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4bda09ac771a9e95b89ecbc699c571a
https://doi.org/10.21685/2307-5538-2020-2-6
https://doi.org/10.21685/2307-5538-2020-2-6
Autor:
L. R. Grigorian, F. A. Kolokolov, M. S. Kovalenko, Yu. A. Agafonov, A. I. Kovalenko, V. I. Zinenko, N. M. Bogatov
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 12:499-503
The irradiation of semiconductor structures with low-energy protons is used to control changes in their properties at a depth ranging from 0.1 to 1000 μm. Devices manufactured from such structures have high sensitivities to changes in the state of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7eda159a871660631fdd232f479ef7f4
https://doi.org/10.1134/s1027451018030035
https://doi.org/10.1134/s1027451018030035