Zobrazeno 1 - 10
of 80
pro vyhledávání: '"N. Lagay"'
Autor:
Catherine Fortin, Dzmitry Pustakhod, Huub Ambrosius, N. Lagay, Florian Lemaitre, Guillaume Binet, Kevin A. Williams, Jean Decobert
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics, 25(5):8734761. Institute of Electrical and Electronics Engineers
The extension of a photonic integrated circuit foundry process flow is proposed by integrating selective area growth (SAG) to enable bandgap tuning for each individual active building block. The process adaptations and the impact on performance are r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7bbd04e36a2ed4aa011ee3bb71d34ea0
https://research.tue.nl/nl/publications/38d9d12f-fdff-4509-acee-71dc48947aab
https://research.tue.nl/nl/publications/38d9d12f-fdff-4509-acee-71dc48947aab
Autor:
Florian Lemaitre, Huub Ambrosius, Sylwester Latkowski, Rastko Pajković, N. Lagay, Kevin A. Williams, C. Fortin, Jean Decobert, E. Smalbrugge
Publikováno v:
ECOC
2018 European Conference on Optical Communication (ECOC)
2018 European Conference on Optical Communication (ECOC)
An array of monolithic wide-tunable lasers is integrated using selective area growth to shift the bandgap of their gain section. A gap-free tuning is demonstrated from the combination of the tuning ranges of the lasers, and single-mode operation is v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5f3f0b2fc1122802806925c98ea4917a
https://research.tue.nl/en/publications/661487ca-0888-4b46-9408-f9ab14985a23
https://research.tue.nl/en/publications/661487ca-0888-4b46-9408-f9ab14985a23
Autor:
N. Lagay, Huub Ambrosius, C. Fortin, Florian Lemaitre, Sylwester Latkowski, Kevin A. Williams, Rastko Pajković, Jean Decobert, E. Smalbrugge
Publikováno v:
31st Annual Conference of the IEEE Photonics Society, IPC 2018
Selective area growth is used for the first time in the TU/e generic integration platform to modify independently the bandgap of active sections. A chip combining 4 tunable lasers with shifted wavelength ranges has been fabricated. A 96 nm wide tunin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::982d88cf442d681022bbdc8f49d3df2a
https://research.tue.nl/nl/publications/009de4c7-545c-49be-851d-70de8f7d42e9
https://research.tue.nl/nl/publications/009de4c7-545c-49be-851d-70de8f7d42e9
Publikováno v:
physica status solidi (a). 213:2699-2703
Monolithic photonic integrated circuits (PIC) transmitters using the prefixed optical phase switching concept for BPSK modulation format have been shown promising at 1.55 μm band. These devices could also be crucial for short reach connections and a
Autor:
Alain Accard, N. Lagay, Antonin Gallet, Guang-Hua Duan, Alexandre Shen, Stephane Malhouitre, Guillaume Levaufre, Segolene Olivier, Romain Brenot, Jean Decobert, Jean-Guy Provost, Dalila Make
Publikováno v:
ECOC
We report on a fully integrated hybrid III-V on silicon distributed feedback laser integrated with a ring resonator, which enables direct modulation at 25 Gb/s with 20dB optical budget at 20km and 5dB extinction ratio.
Autor:
R. Guillamet, Romain Brenot, M. N. Ngo, Christophe Gosset, N. Lagay, Hoang Trung Nguyen, Q. Deniel, Francis Poingt, Didier Erasme, Jean Decobert, Naveena Genay
Publikováno v:
Journal of Lightwave Technology. 31:232-238
We report, for the first time, a transmission experiment over standard fiber at 1.55 μ m using an electroabsorption modulated laser (EML) integrated with a semiconductor optical amplifier (SOA). We show clearly that negative pre-chirped signals can
Autor:
N. Lagay, Jean Decobert, Fernando Rinaldi, A. D. B. Maia, Guillaume Binet, Pierre-Yves Lagrée
Publikováno v:
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
The use of industrial micro x-ray diffraction (μ-XRD) allows us to access composition and thickness of multiple quantum well (MQW) made by selective area growth (SAG). To make high performance photonic integrated circuit (PIC), a precise design of d
Autor:
Stephane Malhouitre, Christophe Kopp, Jean Decobert, Alain Accard, Guillaume Levaufre, Alexandre Shen, Jean-Guy Provost, Dalila Make, Guang-Hua Duan, N. Lagay, Segolene Olivier
Publikováno v:
OFC
10Gb/s directly modulated tunable lasers, integrating chirp management ring resonators, have been designed and fabricated using wafer bonding. Using such a device, we demonstrated error-free transmission over 50km single mode fiber.
Autor:
Aghiad Khadour, Jean-Philippe Tourrenc, Xavier Lafosse, Jean Decobert, N. Lagay, Isabelle Sagnes, Laetitia Leroy, Jean-Christophe Harmand, Jean-Louis Oudar, Audrey Miard, Sophie Bouchoule
Publikováno v:
Optical and Quantum Electronics. 40:155-165
We report on the thermal design and the characterization of InP-based 1.55 μm wavelength large diameter (∼100 μm) optically pumped vertical external cavity surface emitting lasers (OP-VECSELs). The device is thermally optimized for high power ( >
Autor:
Francis Poingt, Christophe Kazmierski, N. Lagay, Jean Decobert, C. Cuisin, Abderrahim Ramdane, Nicolas Dupuis, Pierre-Yves Lagrée
Publikováno v:
IEE Proceedings - Optoelectronics. 153:276-279
Thickness and composition profiles of AlGaInAs-based layers grown by low-pressure metal organic vapour phase epitaxy in the regime of selective area growth (SAG) have been modelled and measured experimentally. Experimental thickness profiles of InP,