Zobrazeno 1 - 10
of 24
pro vyhledávání: '"N. L. Rowell"'
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 5, Iss 1, Pp 2498-2504 (2014)
We report on the optical properties of SiGe nanowires (NWs) grown by molecular beam epitaxy (MBE) in ordered arrays on SiO2/Si(111) substrates. The production method employs Au catalysts with self-limited sizes deposited in SiO2-free sites opened-up
Externí odkaz:
https://doaj.org/article/ddbdf08e334740d2876b3b49235a7cd2
Publikováno v:
Journal of Physics: Conference Series. 972:012014
The National Research Council (NRC) of Canada has established a next generation facility for the primary realization of optical radiant power. The main feature of this facility is a new cryogenic electrical substitution radiometer with a closed-cycle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ca2979fc89ae8e1baa00e394d8ba472
https://doi.org/10.1088/1742-6596/972/1/012014
https://doi.org/10.1088/1742-6596/972/1/012014
Publikováno v:
Journal of Applied Physics. 86:1287-1291
Si0.5Ge0.5/Si multiquantum-well structures are grown using a production-compatible ultrahigh vacuum chemical vapor deposition system. The structures are designed in order to obtain dislocation-free undulating strained layers used as the absorbing lay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d65ee8b6e8156d714880bf5420b7231
https://doi.org/10.1063/1.370883
https://doi.org/10.1063/1.370883
Autor:
J. R. Yang, David J. Lockwood, Y. G. Xu, L. M. Wei, Xinzhi Liu, J. H. Chu, Y. F. Wei, T. Lin, N. L. Rowell, S. L. Guo, Guolin Yu
The Rashba spin-orbit interaction of the two-dimensional electron gas with high mobility in the inversion layer of p-type Hg0.77Cd 0.23Te is investigated by magnetotransport measurements. Both the Rashba spin splitting and Rashba coefficient are extr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1594f4e6d3ebd9f2c3d6d8df97887b2f
https://nrc-publications.canada.ca/eng/view/object/?id=bacfa18b-eae6-47e1-848b-64cfb7ec023f
https://nrc-publications.canada.ca/eng/view/object/?id=bacfa18b-eae6-47e1-848b-64cfb7ec023f
Autor:
T. Makino, T. Nakatskasa, Hirofumi Kan, Tomuo Yamaguchi, Masashi Kumagawa, R. Rinfret, N. L. Rowell, A. Wang, Xiu Ying Gong
Publikováno v:
Crystal Research and Technology. 30:603-612
The high quality InAsSb multi-layers have been grown on InAs substrate by Gd-doped liquid phase epitaxy between 530 and 460 °C. Compositional dependence of energy band gap and of lattice constant for epilayers were studied. The material is character
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c996b420168aff6d042311b431db3e8
https://doi.org/10.1002/crat.2170300505
https://doi.org/10.1002/crat.2170300505
Publikováno v:
Applied Physics Letters. 83:3683-3685
We report an original analysis method to model the p-polarized infrared reflectivity (IR) spectra of (GaAs)m/(AlAs)n superlattices (m=36, 4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70c83902aeaf69a2e0d9017f946c069a
https://doi.org/10.1063/1.1622782
https://doi.org/10.1063/1.1622782
Publikováno v:
Applied Physics Letters. 83:2790-2792
We report a study of photoluminescence (PL) and optical absorption in high-quality tensile-strained Si type-II multiple quantum wells (QWs) grown on bulk crystal SiGe substrates by using low-temperature ultrahigh-vacuum chemical vapor deposition. Det
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3c41a25950d21dbb43f1b3a8d919dbd
https://doi.org/10.1063/1.1615310
https://doi.org/10.1063/1.1615310
Publikováno v:
Applied Physics Letters. 82:1730-1732
Infrared spectroscopic ellipsometry is used to characterize the structure of molecular-beam-epitaxial grown GaAs layers on Si(100) before and after thermal cycle (TC) annealing. The dielectric function of the GaAs epilayer has been described by the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cbe650d16217c93ac34237326092adb1
https://doi.org/10.1063/1.1561577
https://doi.org/10.1063/1.1561577
Raman scattering has been used to characterize Ge1−xMnx (0.01
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::db3cc40547514c1010fdc00ddcb22ab6
http://hdl.handle.net/11581/203142
http://hdl.handle.net/11581/203142
Publikováno v:
Journal of Applied Physics. 68:5796-5803
Photoluminescence spectra are measured for sputter‐deposited, heteroepitaxial (100)CdTe layers of thicknesses up to 14 μm grown on (100)KBr substrates. Three emission bands, at 0.81, 1.00, and 1.41 eV, are observed. From comparison of the photolum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d859d9f07915293fc498572fd1daaa5
https://doi.org/10.1063/1.346950
https://doi.org/10.1063/1.346950