Zobrazeno 1 - 10
of 11
pro vyhledávání: '"N. L. Mattey"'
Publikováno v:
Semiconductor Science and Technology. 12:1231-1234
The electrical conductivity of the 2DHG formed at the interface has been measured on samples with composition 0.05
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4fd229cd73ede2fdb8fe92512bb01b3
https://doi.org/10.1088/0268-1242/12/10/009
https://doi.org/10.1088/0268-1242/12/10/009
Autor:
G. Brunthaler, Evan H. C. Parker, N. L. Mattey, G. Braithwaite, Terry E. Whall, Gerrit E. W. Bauer
Publikováno v:
Journal of Applied Physics. 81:6853-6856
We have measured the energy loss rate as a function of carrier temperature for hot holes in Si/Si0.8Ge0.2 quantum wells with sheet carrier densities in the range (3–7)×1011 cm−2 at lattice temperatures of 0.35 and 2.0 K. Calculations of the ener
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91129441f533d551203f621120c616df
https://doi.org/10.1063/1.365244
https://doi.org/10.1063/1.365244
Autor:
P. J. Phillips, Evan H. C. Parker, O. A. Makarovskii, V. I. Knizhny, N. L. Mattey, G. Braithwaite, O. A. Mironov
Publikováno v:
Acta Physica Polonica A. 88:779-782
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::711b84d566790c45d53e63f8dc755242
https://doi.org/10.12693/aphyspola.88.779
https://doi.org/10.12693/aphyspola.88.779
Autor:
Michael J. Kearney, R. A. Kubiak, C. J. Emeleus, Evan H. C. Parker, Terry E. Whall, D. W. Smith, N. L. Mattey
Publikováno v:
Physical Review B. 47:10016-10019
We report measurements of the magnetoresistance and Hall coefficient of a two-dimensional hole gas defined at a remote-doped Si/Si 0.8 Ge 0.2 heterojunction. In addition to the usual quantum interference and interaction corrections, one can clearly r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e414719cc81b6b67099e1b0d0bda0c57
https://doi.org/10.1103/physrevb.47.10016
https://doi.org/10.1103/physrevb.47.10016
Publikováno v:
Journal of Physics: Condensed Matter. 5:L201-L206
The authors present the results of low-temperature transport measurements on 'metallic' Si:Sb doping layers with nominal widths of 10 nm, 20 nm and 80 nm. There is clear evidence of weak localization and interaction corrections to the transport coeff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31854d4ad190bbf1418439a54826330c
https://doi.org/10.1088/0953-8984/5/14/002
https://doi.org/10.1088/0953-8984/5/14/002
Publikováno v:
Semiconductor Science and Technology. 7:604-607
Measurements of sheet resistance and Hall coefficient between 0.3 K and 30 K have been used to infer two-dimensional weak localization and hole-hole interaction effects in Si:B delta-doped layers. It is found that the renormalized screening parameter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f9cc2566245fe624e732c860ebbac82
https://doi.org/10.1088/0268-1242/7/4/029
https://doi.org/10.1088/0268-1242/7/4/029
Autor:
David Bowen, Evan H. C. Parker, E. Başaran, A.R. Powell, T. Naylor, J. C. Brighten, N. L. Mattey, D. W. Smith, Terry E. Whall, R. D. Barlow, S.M. Newstead, M.G. Dowsett, C. J. Emeleus, C. P. Parry, R. A. Kubiak
Publikováno v:
Journal of Crystal Growth. 111:907-911
This paper considers the low temperature doping of (100) Si and SiGe structures with elemental B and Sb sources particularly with regard to obtaining very narrow delta doping spikes. B is found to be an excellent dopant at SiGe growth temperatures in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::172ff25ce43f221caec12e9c3917a655
https://doi.org/10.1016/0022-0248(91)91105-j
https://doi.org/10.1016/0022-0248(91)91105-j
Autor:
Evan H. C. Parker, Terry E. Whall, N. L. Mattey, G. Brunthaler, Gerrit E. W. Bauer, G. Braithwaite, P. J. Phillips
Publikováno v:
Hot Carriers in Semiconductors ISBN: 9781461380351
The hot carrier energy loss rate in a two dimensional hole gas in compressively strained SiGe quantum wells has been studied for samples with a Ge content (x= 0.2) and carrier concentrations ranging from 3x1011 to 7x1011cm−2. The energy loss in thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9634264d138ba056e7f6b0291e2c42bc
https://doi.org/10.1007/978-1-4613-0401-2_103
https://doi.org/10.1007/978-1-4613-0401-2_103
Autor:
A. D. Plews, R. A. Kubiak, N. L. Mattey, O. A. Mironov, M. J. Kearney, P. J. Phillips, E. H. C. Parker, T. E. Whall
Publikováno v:
Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d502fd60e7685dce1fc9f4de8fa69012
https://doi.org/10.7567/ssdm.1993.pb-1-13
https://doi.org/10.7567/ssdm.1993.pb-1-13
Publikováno v:
Semiconductor Science and Technology. 6:227-228
X-ray diffraction has been used to deduce the width and strain fields of an elemental boron delta layer in (100) Si grown by MBE. It is found to be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d88fcd58c324af05601e33ac40d37f36
https://doi.org/10.1088/0268-1242/6/3/015
https://doi.org/10.1088/0268-1242/6/3/015