Zobrazeno 1 - 10
of 76
pro vyhledávání: '"N. L. Dmitruk"'
Publikováno v:
Sensors, Vol 3, Iss 10, Pp 480-490 (2003)
This paper is devoted to estimate contribution of structure and morphology of the individual design constituents to performance improvement of multilayer polaritonic photodetector (optochemical sensor). Surface plasmon resonance (SPR) in the surface
Externí odkaz:
https://doaj.org/article/55be32b0a99c44efa99813a83cc95fe6
Autor:
I.B. Mamontova, V.R. Romanyuk, Alexander V. Korovin, O. Yu. Borkovskaya, A. V. Sukach, N. L. Dmitruk
Publikováno v:
Solar Energy Materials and Solar Cells. 137:124-130
The investigation is aimed at elaboration of technology for submicron p + - GaAs layer formation on micro/nanotextured n -GaAs substrates by using low-temperature (550 °C) diffusion of zinc to take the advantage of optical and recombination properti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::927a2fd9b1a38371761f58051d1e1c5c
https://doi.org/10.1016/j.solmat.2015.01.019
https://doi.org/10.1016/j.solmat.2015.01.019
Autor:
S. Charnovych, V. R. Romanyuk, N. L. Dmitruk, M. I. Taborskaya, Sándor Kökényesi, N. V. Yurkovich
Publikováno v:
JETP Letters. 99:129-132
In Au/As2S3 metal-semiconductor surface composite structures, anomalous absorption of light beyond the fundamental absorption edge of the semiconductor is observed. This absorption is caused by the interaction of the near field of surface plasmons in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf53170bc7b0578f271af4ae47ab0fa8
https://doi.org/10.1134/s0021364014030060
https://doi.org/10.1134/s0021364014030060
Autor:
Elena V. Basiuk, OlgaYu Borkovskaya, N. L. Dmitruk, Tetyana S. Havrylenko, Sergey V. Mamykin, Vladimir R. Romanyuk
Publikováno v:
MRS Proceedings. 1534:A19-A24
The effect of the deposited on Si substrate Single-wall carbon nanotube (SWCNT) nanolayers on optical, photoelectric and electrical properties of Au/n-Si structures has been investigated. Highly purified SWСNTs were prepared by the arc-discharge met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba5823b1b4986564a225ad0dc5a435bd
https://doi.org/10.1557/opl.2013.293
https://doi.org/10.1557/opl.2013.293
Publikováno v:
MRS Proceedings. 1534:A93-A98
Porous layers have been obtained by electrochemical etching of n-type III-V semiconductor single crystals (GaAs, InP, and GaP) in water or the ethanol solutions of different acids. The InP porous layers have been shown a more ordered and perfect stru
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa93043838ebeb1882b3a216cc52d0d6
https://doi.org/10.1557/opl.2013.305
https://doi.org/10.1557/opl.2013.305
Autor:
I. Simkiene, N. L. Dmitruk, Valentinas Snitka, Igor Dmitruk, Natalia Berezovska, Denis O. Naumenko
Publikováno v:
MRS Proceedings. 1534:A99-A104
Properties of the electrochemically prepared porous III-V semiconductors, GaAs and InP, have been studied using scanning electron microscopy (SEM), atomic force microscopy (AFM), monochromatic multi-angle-of-incidence (MAI) ellipsometry, Raman scatte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41c8f53d91b3f49643a3600f1a544880
https://doi.org/10.1557/opl.2013.316
https://doi.org/10.1557/opl.2013.316
Publikováno v:
Optics and Spectroscopy. 112:233-242
Optical properties of porous A 3 B 5 semiconductors (GaAs, InP, and GaP) in the far-infrared region, in particular, the specular reflection and attenuated total reflection, including the excitation regime of surface polaritons, are considered. Consid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9277ee79617d46e75fc7d240fe0ea67f
https://doi.org/10.1134/s0030400x1201002x
https://doi.org/10.1134/s0030400x1201002x
Autor:
N. L. Dmitruk, Alexander V. Korovin
Publikováno v:
Optics Communications. 284:4254-4258
New formulae for the angles of refraction at the interface of the absorbing/transparent isotropic media are derived from Maxwell's equations. Using the time-averaged Poynting vector for the direction of the beam of light, the noncoincidence of incide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3c2bbde3e67548d90f29e29a76b6225
https://doi.org/10.1016/j.optcom.2011.05.051
https://doi.org/10.1016/j.optcom.2011.05.051
Autor:
Alexander V. Korovin, N. L. Dmitruk
Publikováno v:
Applied Physics A. 103:635-639
The expressions for the time-averaged Pointing’s vector in absorptive left-handed medium based on the classical vector Maxwell’s equations for a continuum have been obtained. It was found that in the case of inclined incidence with mixed polariza
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a757a64861b41b29f991ca16a309897b
https://doi.org/10.1007/s00339-010-6196-9
https://doi.org/10.1007/s00339-010-6196-9
Autor:
N. L. Dmitruk
Publikováno v:
Semiconductor physics, quantum electronics and optoelectronics. 13:369-373
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::901c43ddf63ad10b994bdff9e35a3471
https://doi.org/10.15407/spqeo13.04.369
https://doi.org/10.15407/spqeo13.04.369