Zobrazeno 1 - 10
of 59
pro vyhledávání: '"N. Kernevez"'
Autor:
Dan Buca, Wolfgang Skorupa, Siegfried Mantl, Renato A. Minamisava, Franz Lanzerath, B. Ghyselen, Jean-Michel Hartmann, Uwe Breuer, Wolfgang Heiermann, N. Kernevez
Publikováno v:
215th ECS Meeting-Symposium on Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 24.-29.05.2009, San Francisco, USAECS Transactions, 19(2009)1, 79-86, Pennington, NJ, USA: The Electrochemical Society
Strained Si and SiGe/Si heterostructures on insulator are promising channel materials for future nanoelectronics devices. The successful integration of these materials into new MOSFETs architectures depends on the ability of forming ultra shallow and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c25ba675996875d019d2faa2224353e4
https://doi.org/10.1149/1.3118933
https://doi.org/10.1149/1.3118933
Autor:
B. Ghyselen, Uwe Breuer, Siegfried Mantl, Wolfgang Heiermann, N. Kernevez, Dan Buca, H. Trinkaus, Bernd Holländer
Publikováno v:
ECS Transactions. 19:95-103
Elastic strain intentionally applied to thin layers can be reduced or even completely relaxed by amorphization during ion implantation. Sb implantation and activation in unstrained and strained-SOI substrates and effects on the crystal quality for di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bf314dbfae8dd8b5d1b703a00312743
https://doi.org/10.1149/1.3118935
https://doi.org/10.1149/1.3118935
Autor:
N. Kernevez, Frédéric Mazen, Laurent Clavelier, Chrystel Deguet, Jean-Michel Hartmann, Denis Rouchon, Frederic Allibert, Fabrice Letertre, Takeshi Akatsu, L. Sanchez, Thomas Signamarcheix, C. Richtarch, Virginie Loup, Carlos Mazure, Alice Boussagol, Yves Campidelli
Publikováno v:
Materials Science in Semiconductor Processing. 9:444-448
Germanium-on-insulator (GeOI), which combines high mobility of charge carriers with the advantages of an SOI structure, is an attractive integration platform for the future IC technology. Also, due to its low lattice mismatch with GaAs, III–V compo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05ea5c0bbd701839ba465c060424786b
https://doi.org/10.1016/j.mssp.2006.08.077
https://doi.org/10.1016/j.mssp.2006.08.077
Autor:
M. Zussy, Ch. Lagahe-Blanchard, Marek Kostrzewa, J-M. Fedeli, B. Aspar, J.C. Roussin, L. Di Cioccio, N. Kernevez, Philippe Regreny
Publikováno v:
Sensors and Actuators A: Physical. 125:411-414
We bonded quantum well InP dies on a photonic layer transferred on silicon CMOS processed wafer using direct molecular bonding. This approach is suitable for new applications, viz., photonics on silicon, 3D packaging and integrated sensors. The chips
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8da117f9c427d59e585dc4d558dc4178
https://doi.org/10.1016/j.sna.2005.07.023
https://doi.org/10.1016/j.sna.2005.07.023
Autor:
D. Bensahel, A. Tiberj, Vincent Paillard, N. Kernevez, M. N. Séméria, Bruno Ghyselen, Hubert Moriceau, Etienne Snoeck, André Rocher, C. Di Nardo, Alain Claverie, Pascal Besson, Thomas Ernst, J.M. Hartmann, Alexandra Abbadie, Cecile Aulnette, Anne Ponchet, Fuccio Cristiano, Frank Fournel, Olivier Rayssac, M. Cabié, Francois Andrieu, I. Cayrefourq, Laetitia Vincent, Philippe Boucaud, Carlos Mazure, Y. Bogumilowicz, Benedite Osternaud, Nicolas Daval
Publikováno v:
Solid-State Electronics. 48:1285-1296
Strained silicon on insulator wafers are today envisioned as a natural and powerful enhancement to standard SOI wafers and/or bulk-like strained Si layers. This paper is intended to demonstrate through miscellaneous structural results how a layer tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80645e4dd32d70e3eedeaa9e232397ed
https://doi.org/10.1016/j.sse.2004.01.011
https://doi.org/10.1016/j.sse.2004.01.011
Publikováno v:
International Journal of Thermophysics. 20:1071-1083
The gas levitation process development program has, so far, been focused mainly on contact-free manipulation, on molding and shaping of liquids, on high-temperature contact-free treatment, and on shaping and solidification of interesting materials fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::873988ac3d2dc0f46c7875442e157b05
https://doi.org/10.1023/a:1022698619162
https://doi.org/10.1023/a:1022698619162
Publikováno v:
IEEE Transactions on Magnetics. 28:3054-3059
Weak field magnetic resonance is usually limited by the signal-to-noise ratio, which decreases drastically with the field. The authors present high-resolution NMR (nuclear magnetic resonance) and ESR (electron spin resonance) sensors developed for Ea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6e4ab82e180fb187b91a5d560efdca0
https://doi.org/10.1109/20.179715
https://doi.org/10.1109/20.179715
Autor:
Ian Cayrefourcq, Ralf Illgen, W. Klix, Manfred Horstmann, Mark Kennard, Andy Wei, N. Kernevez, F. Metral, Eric Guiot, Tom Herrmann, Stefan Flachowsky, A. Ramirez, P. Hermann, R. Stenzel, J. Hontschel
Publikováno v:
2009 10th International Conference on Ultimate Integration of Silicon.
Biaxial tensile strained substrates offer strong electron mobility enhancements resulting in large drive current gains. For short channel n-MOSFETs, however, these improvements diminish. Root causes for this performance degradation are investigated t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b51a29161394fb70feca52fdc4cb7ab
https://doi.org/10.1109/ulis.2009.4897562
https://doi.org/10.1109/ulis.2009.4897562
Autor:
S. Maitrejean, Didier Louis, N. Sillon, B. Jones, Ritwik Chatterjee, A. Roman, M. Heitzmann, Sam S. Garcia, T. Enot, P. Leduc, T. Sparks, M. Fayolle, N. Kernevez, Barbara Charlet, Eddie Acosta, Scott K. Pozder, O. Louveau, Zhihong Huang, Varughese Mathew, Gérard Passemard, V. Po, Marc Zussy
Publikováno v:
2007 IEEE International Interconnect Technology Conferencee.
A three-dimensional (3D) wafer-to-wafer integration technology has been developed using face-to-face dielectric wafer bonding, followed by wafer thinning and backside interconnect formation. The key technologies required for this integration include:
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c854d58d022c5c216717fe8a27833ea
https://doi.org/10.1109/iitc.2007.382355
https://doi.org/10.1109/iitc.2007.382355
Autor:
Thomas Signamarcheix, Laurent Clavelier, Cyrille Le Royer, T. Billon, S. Lagrasta, Carl Quaeyhaegens, D. Bensahel, B. Depuydt, N. Kernevez, Jean-Francois Damlencourt, Yves Morand, Claude Tabone, Olivier Kermarrec, Y. Campidelli, Arnaud Rigny, S. Descombes, Jean-Michel Hartmann, Simon Deleonibus, Nikolay Cherkashin, Antoon Theuwis, Benjamin Vincent, Chrystel Deguet, T. Akastu, P. Rivallin, L. Sanchez
Publikováno v:
Workshop on Germanium for CMOS
Workshop on Germanium for CMOS, Nov 2006, ville indéterminée, Unknown Region. pp.789-805, ⟨10.1149/1.2355874⟩
Workshop on Germanium for CMOS, Nov 2006, ville indéterminée, Unknown Region. pp.789-805, ⟨10.1149/1.2355874⟩
The challenges posed by the scaling of Silicon (Si) devices make mandatory the study of new materials to overcome the physical limitations of the Si. Germanium (Ge) was actually used in the first transistors but was then abandoned in favour of Si due
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4581ac3f93125f1c1d7538e5f880620
https://hal.science/hal-01736072
https://hal.science/hal-01736072
