Zobrazeno 1 - 10
of 50
pro vyhledávání: '"N. Kauffmann"'
Autor:
Daniel J. Bailey, Laura J. Gardner, Martin C. Stennett, Claire L. Corkhill, Sam A. Walling, Neil C. Hyatt, Marcus N. Kauffmann
Publikováno v:
Journal of Hazardous Materials. 401:123764
Materials from GeoMelt® In-Container Vitrification (ICV)™ of simulant UK nuclear wastes were characterised to understand the partitioning of elements, including inactive surrogates for radionuclide species of interest, within the heterogeneous pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::343f4db2e6583e7d037e8be03c996caa
https://doi.org/10.1016/j.jhazmat.2020.123764
https://doi.org/10.1016/j.jhazmat.2020.123764
Publikováno v:
Der Fahrer im 21. Jahrhundert
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2e605f8ecb4ce004d69a72d4a829edd
https://doi.org/10.51202/9783181023112-193
https://doi.org/10.51202/9783181023112-193
Autor:
Matthias Fippel, Joseph O. Deasy, Iwan Kawrakow, M. Vicic, I. El Naqa, K Zakarian, P.E. Lindsay, N Kauffmann, Jeffrey V. Siebers, Mladen Victor Wickerhauser
Publikováno v:
Physics in Medicine and Biology. 50:909-922
Recent studies have demonstrated that Monte Carlo (MC) denoising techniques can reduce MC radiotherapy dose computation time significantly by preferentially eliminating statistical fluctuations ('noise') through smoothing. In this study, we compare n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d53700f4ace6232d672352cc2bd74d4
https://doi.org/10.1088/0031-9155/50/5/014
https://doi.org/10.1088/0031-9155/50/5/014
Akademický článek
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Autor:
Frédéric Aniel, Sylvain Blayac, J.L. Benchimol, Agnieszka Konczykowska, M. Abboun, P. Andre, Muriel Riet, N. Kauffmann, Jean Godin
Publikováno v:
IEEE Journal of Solid-State Circuits. 36:639-647
The design of high-speed circuits and optimization of function of technological and geometrical parameters are presented. Various modeling aspects are discussed, such as model accuracy for InP heterojunction bipolar transistor and modeling with techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::920370fd94710b175cae8cc3c494b348
https://doi.org/10.1109/4.913742
https://doi.org/10.1109/4.913742
Publikováno v:
Proceedings of 2011 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2011
IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2011
IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2011, 2011, Baltimore, MD, United States. pp.1-4, ⟨10.1109/RFIC.2011.5940662⟩
IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2011
IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2011, 2011, Baltimore, MD, United States. pp.1-4, ⟨10.1109/RFIC.2011.5940662⟩
This paper presents a novel methodology for the extraction of the substrate network components in n-MOS isolated devices, based on original “Gate-Bulk” structures. Since the main model acceptance criteria is here the frequency dependency, a large
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7836a10685462c7fc76a763c6e0157cc
https://hal.archives-ouvertes.fr/hal-00799791
https://hal.archives-ouvertes.fr/hal-00799791
Publikováno v:
2010 IEEE International Integrated Reliability Workshop Final Report.
RF reliability is becoming an increasing concern for actual technology platforms. In this context, small signal equivalent circuit degradation under hot carrier stress is investigated. It is shown that some lumped elements such as the conductance, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::660361545b3ef2bd1d321e28213ad267
https://doi.org/10.1109/iirw.2010.5706489
https://doi.org/10.1109/iirw.2010.5706489
Publikováno v:
2007 IEEE International Conference on Microelectronic Test Structures.
For device modelling purposes, the geometry dependence of the external collector resistance has been investigated. Firstly, the collector resistance is split into a perfectly 1D vertical resistance and a 2D horizontal contribution. Using specific tes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::309637b0dacf0217aff91beb35b4b819
https://doi.org/10.1109/icmts.2007.374464
https://doi.org/10.1109/icmts.2007.374464
Akademický článek
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Autor:
P. Berdaguer, A.M. Duchenois, Sylvain Blayac, J.R. Burie, J.L. Benchimol, N. Kauffmann, P. Desrousseaux, Agnieszka Konczykowska, Muriel Riet, Jean Godin, P. Andre
Publikováno v:
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369).
To address the needs for very high speed electronic circuits for high bit-rate optical communications, we have developed an InP DHBT self-aligned process with f/sub T/ and f/sub MAX/ of 130 and 150 GHz; 40 Gb/s circuits, such as a 2:1 and 4:1 multipl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0e9fa6973787d272bac7bc5fe3ccd28
https://doi.org/10.1109/gaas.1999.803754
https://doi.org/10.1109/gaas.1999.803754