Zobrazeno 1 - 10
of 58
pro vyhledávání: '"N. Kaluza"'
Publikováno v:
Journal of Crystal Growth. 307:6-13
Undoped GaN epilayers were grown on sapphire (0 0 0 1) substrates using different H 2 /N 2 carrier gas ratios (0%, 50%, 70%, 80%, and 100% N 2 content in the mixtures) in metal organic vapor phase epitaxy (MOVPE). Growth was observed in situ by refle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5151b66eef84d7846a383c3a80c03c7
https://doi.org/10.1016/j.jcrysgro.2007.05.058
https://doi.org/10.1016/j.jcrysgro.2007.05.058
Autor:
Hilde Hardtdegen, G. Heidelberger, N. Kaluza, H. L. Bay, Michel Marso, Yong Suk Cho, Konrad Wirtz, R. Steins, M. von der Ahe
Publikováno v:
Applied Physics A. 87:491-498
This paper reports on new approaches for growth control of GaN-based heterostructures for high frequency and high power application. First in situ methods are presented and their further development discussed [1]. The development leads to a greatly i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1a0c9be23065efdb5366df8958084cb
https://doi.org/10.1007/s00339-007-3933-9
https://doi.org/10.1007/s00339-007-3933-9
Autor:
Y. S. Cho, Bernd Beschoten, Uwe Breuer, Th. Schäpers, V. A. Guzenko, Hans Lüth, N. Kaluza, M. R. Ghadimi, M. Fecioru-Morariu, H.-P. Bochem, Hilde Hardtdegen
Publikováno v:
physica status solidi (a). 204:72-77
This paper reports on the growth of Cr-doped GaN layers by metal organic vapor phase epitaxy (MOVPE) and their characterization for possible spintronic applications. We have used bis (cyclopentadienyl)chromium (Cp 2 Cr) to intentionally incorporate c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1a21260cdd8dc142b4f76b4ecc32d48
https://doi.org/10.1002/pssa.200673016
https://doi.org/10.1002/pssa.200673016
Publikováno v:
Journal of Crystal Growth. 298:413-417
This paper discusses the results of a combined modeling and experimental analysis of AlGaN deposition in the horizontal two-flow AIX 200/4 RF-S reactor. The purpose of this study is to examine conventional and inverted supply of the precursors into t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::577f2086dd3032c05d73a32e3674b2d7
https://doi.org/10.1016/j.jcrysgro.2006.10.047
https://doi.org/10.1016/j.jcrysgro.2006.10.047
Publikováno v:
Physica status solidi / C 3, 1408-1411 (2006). doi:10.1002/pssc.200565121
Metalorganic vapor phase epitaxy (MOVPE) of GaN was performed using hydrogen (H2), nitrogen (N2) and H2/N2mixtures thereof as the carrier gas in the high temperature buffer growth range. The effect of carrier gas on the structural and morphological c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::438ca516e97c072d9eb8bf30bb6206ff
https://doi.org/10.1002/pssc.200565121
https://doi.org/10.1002/pssc.200565121
Autor:
Y. Dikme, N. Kaluza, R. Steins, H. L. Bay, André Strittmatter, Rolf H. Jansen, Zdeněk Sofer, L. Reißmann, Hilde Hardtdegen, Michael Heuken, Dieter Bimberg, Holger Kalisch, J.-T. Zettler, Y. S. Cho
Publikováno v:
physica status solidi (a). 203:1645-1649
This paper reports on the in situ determination of the Al-content in Al x Ga 1-x N layers deposited by MOVPE on sapphire and silicon substrates by means of optical reflectance. The accuracy of the conventional in situ method which utilizes the depend
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65bce3267d229554d7cc8da0e7302add
https://doi.org/10.1002/pssa.200565313
https://doi.org/10.1002/pssa.200565313
Publikováno v:
Journal de physique / 4 132, 177-183 (2006). doi:10.1051/jp4:2006132034
This paper reports on how the observation of the morphology development and growth by in situ optical methods as well as the determination of substrate temperature can be employed to tailor the characteristics of GaN and to control growth in MOVPE (m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0bc58c0723b5d86ac96759bf08e5afdb
https://doi.org/10.1051/jp4:2006132034
https://doi.org/10.1051/jp4:2006132034
Autor:
R. Steins, Hilde Hardtdegen, Y. S. Cho, K. Haberland, J.-T. Zettler, Zdeněk Sofer, Martin Zorn, N. Kaluza
Publikováno v:
physica status solidi (b). 242:2581-2586
In this paper we will first report on the use of real-time determination of wafer temperature for transparent substrates. With this method we will study the unintentional influence of growth parameter variations on the surface temperature. The effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d8d4b4e83d8cdbf9ccd76cda67f439e
https://doi.org/10.1002/pssb.200541099
https://doi.org/10.1002/pssb.200541099
Autor:
Hilde Hardtdegen, H. L. Bay, Hans Lüth, R. Meijers, Raffaella Calarco, Martina von der Ahe, N. Kaluza, M. Buchmeier, D.E. Bürgler
Publikováno v:
Journal of Crystal Growth. 283:500-507
Fe films of different thicknesses were deposited on wurtzite GaN(0 0 0 1) layers by electron beam evaporation. They were studied by a number of characterization techniques such as low-energy electron diffraction (LEED), X-ray diffraction (XRD), atomi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a88abe594f20ad4c55080d9827b4fcd
https://doi.org/10.1016/j.jcrysgro.2005.06.004
https://doi.org/10.1016/j.jcrysgro.2005.06.004
Publikováno v:
physica status solidi (a). 202:744-748
Using a new susceptor set-up a systematic study on gas phase transport properties was carried out with the aim of obtaining layer uniformity. By determining the influence of the transport parameters on growth it is then possible to achieve symmetric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3201549adf4ef109d01a41faf162d0e
https://doi.org/10.1002/pssa.200461468
https://doi.org/10.1002/pssa.200461468