Zobrazeno 1 - 10
of 42
pro vyhledávání: '"N. K. Polyakov"'
Autor:
L. I. Goray, E. V. Pirogov, M. V. Svechnikov, M. S. Sobolev, N. K. Polyakov, L. G. Gerchikov, E. V. Nikitina, A. S. Dashkov, M. M. Borisov, S. N. Yakunin, A. D. Bouravleuv
Publikováno v:
Technical Physics Letters. 47:757-760
Autor:
Leonid I. Goray, M. S. Sobolev, A. D. Bouravleuv, N. K. Polyakov, E. V. Pirogov, A. S. Dashkov, M. V. Svechnikov
Publikováno v:
Technical Physics. 65:1822-1827
Elastically strained supermultiperiod (100–1000 periods) AlGaAs/GaAs superlattices with different doping levels and slightly differing period thicknesses have been investigated. The proposed technique of characterization consisting of combined appl
Autor:
A. I. Khrebtov, Vladimir G. Dubrovskii, Peter Werner, G. E. Cirlin, Yu. B. Samsonenko, V. P. Ulin, N. K. Polyakov, A. D. Bouravleuv
Publikováno v:
Semiconductors. 45:431-435
The processes of growth of self-catalyzed GaAs crystal nanowires on Si (111) surfaces modified by three different methods are studied. For the technology of production of the GaAs nanowires, molecular-beam epitaxy is used. It is found that, in the ra
Autor:
Dmitry Denisov, A. A. Gorbazevich, N. K. Polyakov, A. G. Gladyshev, A. Yu. Egorov, E. V. Pirogov, Ekaterina V. Nikitina
Publikováno v:
Semiconductors. 44:919-923
Double pulse doped (δ-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determin
Autor:
N. K. Polyakov, Vladimir G. Dubrovskii, G. E. Cirlin, V. A. Egorov, V. P. Ulin, Yu. B. Samsonenko
Publikováno v:
Semiconductors. 42:1445-1449
The results of experimental studies on the growth and the morphological and structural properties of GaAs nanowire crystals on different silicon surfaces are reported. It is shown that the nonplanar geometrical layout of growth allows the production
Autor:
N. K. Polyakov, Vadim A. Shalygin, Leonid E. Vorobjev, H. Pascher, Alexander A. Tonkikh, D. A. Firsov, Yu. B. Samsonenko, V. M. Ustinov, G. E. Cirlin, J. Fürst
Publikováno v:
International Journal of Nanoscience. :319-322
Polarized photoluminescence from InAs / GaAs self-assembled quantum dots has been investigated under continuous wave excitation by circularly polarized light. Depolarization of the photoluminescence in a magnetic field perpendicular to the wavevector
Autor:
Vadim A. Shalygin, A. Seilmeier, Yu. B. Samsonenko, N. K. Fedosov, S. Hanna, Nikita A. Pikhtin, M. Sekowski, V. Yu. Panevin, I. S. Tarasov, D. A. Firsov, G. E. Cirlin, Alexander A. Tonkikh, Leonid E. Vorobjev, A. E. Zhukov, I. V. Mikhaylov, M. A. Barzilovich, N. K. Polyakov, V. M. Ustinov, François H. Julien
Publikováno v:
International Journal of Nanoscience. :241-244
Optical phenomena in quantum dot and quantum well nanostructures aimed at the development of mid-infrared lasers based on intraband electron transitions are investigated in the conditions of interband optical pumping. Evolution of photoluminescence s
Autor:
Konstantin A. Ivanov, Natalia Kaliteevskaya, Leonid I. Goray, E. V. Pirogov, M. A. Kaliteevski, N. K. Polyakov, A. R. Gubaydullin, A. Yu. Egorov, Ekaterina V. Nikitina, Stewart J. Clark, Dmitry Denisov, Galia Pozina
Publikováno v:
Scientific reports, 2015, Vol.5, pp.14911 [Peer Reviewed Journal]
Scientific Reports
Scientific Reports
We report direct experimental evidence of the collective super-radiant mode in Bragg structure containing 60 InAs monolayer-based quantum wells (QWs) periodically arranged in GaAs matrix. Time-resolved photoluminescence measurements reveal an appeara
Autor:
N. V. Sibirev, N. K. Polyakov, V. M. Ustinov, Alexander A. Tonkikh, G. E. Cirlin, Vladimir G. Dubrovskii, Yu. B. Samsonenko, I. P. Soshnikov
Publikováno v:
physica status solidi (a). 203:1365-1369
The structural properties of GaAs and AlGaAs nanowhiskers (NWs) grown by molecular beam epitaxy (MBE) on a GaAs substrate surfaces of different crystallographic orientations are investigated. Under optimal growth conditions, the aspect ratio of MBE g
Autor:
Vladimir G. Dubrovskii, V. M. Ustinov, N. V. Sibirev, N. K. Polyakov, G. E. Cirlin, I. P. Soshnikov, A. A. Tonkikh, Yu. B. Samsonenko
Publikováno v:
Czechoslovak Journal of Physics. 56:13-20
The structural properties of GaAs nanowhiskers (NWs) grown by molecular beam epitaxy (MBE) are investigated. Under optimal growth conditions, the aspect ratio of MBE grown GaAs NWs is higher than 100. The maximum length of NWs is several times (up to