Zobrazeno 1 - 10
of 12
pro vyhledávání: '"N. J. Whitehead"'
Publikováno v:
Insight - Non-Destructive Testing and Condition Monitoring. 62:73-80
Magnetic flux leakage (MFL) is a technique commonly used to inspect storage tank floors. This paper describes a practical evaluation of the effect of scanning velocity on defect detection in mild steel plates with thicknesses of 6 mm, 12 mm and 16 mm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e310102bebff7fdad045fd98642697f6
https://doi.org/10.1784/insi.2020.62.2.73
https://doi.org/10.1784/insi.2020.62.2.73
We use micromagnetic modeling to demonstrate the operation of graded index lenses designed to steer forward-volume magnetostatic spin waves by 90 and 180 degrees. The graded index profiles require the refractive index to diverge in the lens center, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5d466a37331b4ff4453a2598e4e2868
Publikováno v:
Applied Physics Letters
We report on the theory of a Luneburg lens for forward-volume magnetostatic spin waves, and verify its operation via micromagnetic modelling. The lens converts a plane wave to a point source (and vice versa) by a designed graded index, realised here
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::480c60ee0ad9fa8304397102a4d22ac1
Autor:
C. S. Davies, Dan A. Allwood, A. N. Kuchko, R. Dost, N. J. Whitehead, Y. Au, Gino Hrkac, Beverley J. Inkson, F. B. Mushenok, V. D. Poimanov, V. V. Kruglyak, Thomas G. Philbin, Simon A. R. Horsley
Publikováno v:
Spin Wave Confinement ISBN: 9781315110820
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c0303439bbd2d059e42f8227d910a5cb
https://doi.org/10.1201/9781315110820-2
https://doi.org/10.1201/9781315110820-2
Publikováno v:
Physical Review B
We report an analytical theory of linear emission of exchange spin waves from a Bloch domain wall, excited by a uniform microwave magnetic field. The problem is reduced to a one-dimensional Schr\"odinger-like equation with a P\"oschl-Teller potential
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::83cecb1ce63a9e8cbde8cb9b5424fc4c
Autor:
N. J. Whitehead, B.J. Sealy
Publikováno v:
Solid-State Electronics. 33:1493-1497
Etude des effets de l'implantation de l'oxygene dans les couches de type n formees par l'implantation de silicium, a l'aide d'une technique capacite-tension (C-V)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a77954ae877d5aa96e825ccc889be9cc
https://doi.org/10.1016/0038-1101(90)90126-y
https://doi.org/10.1016/0038-1101(90)90126-y
Publikováno v:
Journal of Applied Physics. 71:5715-5717
We report the photoluminescence study of low‐energy, low‐dose oxygen implantation induced compositional disordering of AlGaAs/GaAs quantum well structures. Significant disordering of both single and multiple AlGaAs/GaAs quantum wells has been ach
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::276a5fd1563ef80e533bf702ab6cee1f
https://doi.org/10.1063/1.350508
https://doi.org/10.1063/1.350508
Autor:
N. J. Whitehead, Y. S. Tang, B.J. Sealy, William P. Gillin, Kevin P. Homewood, C. R. Whitehouse, M. T. Emeny
Publikováno v:
Applied Physics Letters. 56:1116-1118
We have studied the resistance to thermal processing of a realistic strained‐layer device structure: a GaAs/GaInAs p‐type modulation‐doped field‐effect transistor layer. The integrity of the structure was monitored using the photoluminescence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e370ac769827eb358319fff6d6faf901
https://doi.org/10.1063/1.102585
https://doi.org/10.1063/1.102585
Publikováno v:
SPIE Proceedings.
This paper reviews the process of implantation induced multiquantum-well (MQW) mixing in GaAlAs/GaAs and GalnAs/InP MQW structures. The effects of varying the implanted ion dose and the annealing temperature and time on the properties of the mixed ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1592b1258acf20d7546cc6f9a18b238c
https://doi.org/10.1117/12.963359
https://doi.org/10.1117/12.963359
Publikováno v:
Semiconductor Science and Technology. 5:1146-1146
Disorder-induced mixing of In0.53Ga0.47As/InP multiple quantum wells has been achieved using phosphorus implantation and subsequent annealing. Photoluminescence has been used as a characterization technique and the results show that the mixing proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b5507a5c6ae304f9103dac0ba1ddfc3
https://doi.org/10.1088/0268-1242/5/11/515
https://doi.org/10.1088/0268-1242/5/11/515