Zobrazeno 1 - 10 of 16 pro vyhledávání: '"N. J. Jeffs"'
1
High Temperature RF Characterisation of SiN Passivated and Unpassivated AlGaN/GaN HFETs
Autor: Ian Harrison, N. W. Clayton, N. J. Jeffs
Publikováno v: physica status solidi (a). 188:275-278
AlGaN/GaN heterojunction field effect transistors were tested at elevated temperatures, up to +180°C, to determine the effect on the device performance. Ageing of the device during these measurements was also studied. A comparison between devices fa
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e7fafa90e9b98a9a64b10633bfad7015
https://doi.org/10.1002/1521-396x(200111)188:1<275::aid-pssa275>3.0.co
Zobrazit plný text záznamu
2
Surface reconstruction patterns of GaN grown by molecular beam epitaxy on GaN bulk crystals
Autor: Izabella Grzegory, S. Porowski, Sergei V. Novikov, N. J. Jeffs, C. T. Foxon, Tin S. Cheng, D Korakakis
Publikováno v: Journal of Crystal Growth. 207:1-7
An investigation of the conditions giving rise to surface reconstruction for GaN grown by molecular beam epitaxy on (0 0 0 1) bulk GaN substrates has been carried out. The results of different surface reconstructions were investigated by supplying Ga
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a477d6b62fc07627745c61eb989b2720
https://doi.org/10.1016/s0022-0248(99)00354-1
Zobrazit plný text záznamu
3
RHEED Studies of Group III-Nitrides Grown by MBE
Autor: N. J. Jeffs, Izabella Grzegory, Tin S. Cheng, C. T. Foxon, C.S. Davis, Sergei V. Novikov, D Korakakis, O.H. Hughes, S. Porowski
Publikováno v: physica status solidi (a). 176:723-726
We report on the mechanisms giving rise to surface reconstruction for homo-epitaxial GaN grown by molecular beam epitaxy on (0001-) bulk GaN substrates. We have studied the surface reconstruction observed during growth and investigated the effects of
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::91af1ff7c7c1c49c158c190cb83e756b
https://doi.org/10.1002/(sici)1521-396x(199911)176:1<723::aid-pssa723>3.0.co
Zobrazit plný text záznamu
4
RHEED studies of the GaN surface during growth by molecular beam epitaxy
Autor: C. T. Foxon, O.H. Hughes, Sergei V. Novikov, Tin S. Cheng, N. J. Jeffs, D Korakakis
Publikováno v: Journal of Crystal Growth. :388-391
RHEED studies of the reconstructions obtained during growth of GaN on a range of different substrates are reported. The effects of pre-nitridation of the substrate, of growth temperature and also of surface contamination by oxygen and arsenic are dis
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::14789e52062b514e758930ebadcb4f0f
https://doi.org/10.1016/s0022-0248(98)01354-2
Zobrazit plný text záznamu
5
EXAFS studies of Mg doped InN grown on Al2O3
Autor: Tin S. Cheng, N. J. Jeffs, J.F.W Mosselmans, L.B Flannery, A.D Smith, C. T. Foxon, A.V Blant, Ian Harrison
Publikováno v: Materials Science and Engineering: B. 59:218-221
We have been studying the structural properties of Group III-nitrides by EXAFS. Previously we have investigated bulk Group III-nitrides and its alloys and have demonstrated that we can grow the full range of alloys from AlN to InN at low temperatures
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f454d7fa91c42f23886d38b2c7b515dc
https://doi.org/10.1016/s0921-5107(98)00394-8
Zobrazit plný text záznamu
6
Gallium-induced surface reconstruction patterns of GaN grown by molecular beam epitaxy
Autor: O.H. Hughes, Tin S. Cheng, A.E. Nikolaev, N. J. Jeffs, Yu. V. Melnik, Sergei V. Novikov, C. T. Foxon, Vladimir Dmitriev
Publikováno v: Surface Science. 421:377-385
We report on an investigation of the mechanisms giving rise to surface reconstruction for GaN grown by molecular beam epitaxy (MBE) on a range of different substrates. We have studied the effects of surface contamination by oxygen or arsenic and demo
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c2cfd9105f6921e8e7221b76eae1796a
https://doi.org/10.1016/s0039-6028(98)00867-x
Zobrazit plný text záznamu
7
The initiation of GaN growth by molecular beam epitaxy on GaN composite substrates
Autor: R. P. Campion, Yu. V. Melnik, Vladimir Dmitriev, D. Tsvetkov, O.H. Hughes, N. J. Jeffs, Sergey Stepanov, D Korakakis, Tin S. Cheng, A. E. Cherenkov, Sergei V. Novikov, C. T. Foxon, V. B. Lebedev
Publikováno v: Scopus-Elsevier
We report on an investigation of the initial stages of growth by molecular beam epitaxy (MBE) of GaN layers on composite substrates consisting of hydride vapour phase epitaxial (HVPE) GaN films on SiC substrates. In situ reflection high energy electr
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d836bdbd50cccd4942c0262c889b9b2
https://doi.org/10.1016/s0022-0248(98)00951-8
Zobrazit plný text záznamu
8
Hydride vapour phase epitaxy of GaN on molecular beam epitaxial GaN substrates
Autor: L. M. Fedorov, Yu. V. Zhilyaev, V. M. Botnaryuk, I. N. Goncharuk, Sergei V. Novikov, C. T. Foxon, Ian Harrison, Tin S. Cheng, N. J. Jeffs, Vasily V. Bel'kov, V.P Ulin, N. I. Katsavets
Publikováno v: Journal of Crystal Growth. 187:29-34
We have studied the growth by hydride vapour phase epitaxy (HVPE) of GaN on GaN layers grown by molecular beam epitaxy (MBE) on sapphire and GaAs(1 1 1)B substrates. For growth on the GaN/sapphire composite substrates, the properties of the HVPE GaN
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bc272067614881de36591f9a22b4e55e
https://doi.org/10.1016/s0022-0248(97)00859-2
Zobrazit plný text záznamu
10
EXAFS studies of plasma-enhanced MBE grown Group III-Nitrides
Autor: A.V Blant, J.F.W Mosselmans, Tin S. Cheng, C. T. Foxon, P.G Harrison, A J Dent, C Bailey, N. J. Jeffs
Publikováno v: Materials Science and Engineering: B. 50:38-41
We have been studying the structural properties of Group III-Nitrides on Si substrates. We have shown from X-ray data that alloys of (AlGa)N and (InGa)N can be grown by plasma enhanced molecular beam epitaxy on oxidised (100) Si substrates with good
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fdbcf578c92300e2c026b0392d0430ec
https://doi.org/10.1016/s0921-5107(97)00206-7
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje