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pro vyhledávání: '"N. J. Di Giuseppe"'
Autor:
G.H. Olsen, N. J. Di Giuseppe, Ramon U. Martinelli, M.J. Lange, Dong-Su Kim, Stephen R. Forrest
Publikováno v:
IEEE Photonics Technology Letters. 7:911-913
VALANCHE photodiodes (APD's) using lattice-matched A In053Ga0.47As-InP epitaxial layers with gains exceeding 20 for use in the 1.0-1.7-pm-wavelength optical mn"mcations spectral band have been commercially available for several years. However, no dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8083a55fb7a42c136f48557a29a93388
https://doi.org/10.1109/68.404012
https://doi.org/10.1109/68.404012
