Zobrazeno 1 - 9
of 9
pro vyhledávání: '"N. I. Yakovlev"'
Publikováno v:
Measurement Techniques. 25:439-442
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::556257df162d7028f3e48c5509b56a35
https://doi.org/10.1007/bf00825103
https://doi.org/10.1007/bf00825103
Publikováno v:
Soviet mining science. 5:430-434
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbde6123167c75d2dd26a4436931dd96
https://doi.org/10.1007/bf02501409
https://doi.org/10.1007/bf02501409
Publikováno v:
Soviet mining science. 3:537-540
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e25df779f9f9296592a38d154536759
https://doi.org/10.1007/bf02497953
https://doi.org/10.1007/bf02497953
Autor:
N. I. Yakovlev
Publikováno v:
Soviet Mining Science. 6:276-280
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c35d9e1b812b29cae9151b598b1b9ae6
https://doi.org/10.1007/bf02501294
https://doi.org/10.1007/bf02501294
Publikováno v:
Тонкие химические технологии, Vol 10, Iss 6, Pp 37-43 (2015)
Many techniques for high-resolution surface analysis of semiconductors are known, such as optical-, X-ray-, transmission electron microscopy etc. However, atomic-force microscopy and scanning electron microscopy are generally used. In this article, b
Externí odkaz:
https://doaj.org/article/376600e3557a4f55b235f90dbb6010cd
Publikováno v:
Soviet Mining Science. 7:21-23
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42640b3084b2f784f2b86dfeedd04724
https://doi.org/10.1007/bf02501218
https://doi.org/10.1007/bf02501218
Publikováno v:
Soviet Mining Science. 8:16-18
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87ca647d08dd17c17be97ba8f323caa8
https://doi.org/10.1007/bf02497801
https://doi.org/10.1007/bf02497801
Publikováno v:
Soviet Mining Science. 7:111-113
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32259ff8affc693132765c16e7683a3b
https://doi.org/10.1007/bf02501234
https://doi.org/10.1007/bf02501234
Publikováno v:
Тонкие химические технологии, Vol 8, Iss 5, Pp 94-98 (2013)
Methods of chem-mech polishing and chemical etching were described, and characteristics of Ge wafers were investigated corresponding to technical requirements of MBE growth. Investigation methods included optical microscopy, X-ray diffraction analysi
Externí odkaz:
https://doaj.org/article/d7b5ee1c7e6b4c6db7db4f5c56f54097