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pro vyhledávání: '"N. I. Lebbdeva"'
Publikováno v:
Physica Status Solidi (a). 84:171-177
The depth distribution of As, Sb, and In atoms ion-implanted into silicon is studied with the helium ion backscattering technique after the action of a pulsed electron beam. It is shown that the impurity diffusion coefficients Di, when using electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8196978a67e8fe4b53bdda1932700e5
https://doi.org/10.1002/pssa.2210840121
https://doi.org/10.1002/pssa.2210840121
