Zobrazeno 1 - 10
of 54
pro vyhledávání: '"N. I. Kurdiani"'
Publikováno v:
Russian Physics Journal. 46:342-347
The photoconductivity of semi-insulating GaAs compensated by chromium oxide is investigated. It is demonstrated that after heat treatment, the current photosensitivity of a sample irradiated with particles whose energies exceed the band gap reaches l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3c60b83f144fc72c23fdf9668c7e379
https://doi.org/10.1023/a:1025711522993
https://doi.org/10.1023/a:1025711522993
Publikováno v:
Physica Status Solidi (a). 36:73-79
A low-temperature method is described of obtaining MIS-structures of the type Ge3N4–GaAs. Some results are given on the physical properties of the structures. Es wird eine Niedertemperaturmethode zur Erzielung von MIS-Strukturen vom Typ Ge3N4–GaA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::265891047199943b3e70334a6c8a7c24
https://doi.org/10.1002/pssa.2210360107
https://doi.org/10.1002/pssa.2210360107
Publikováno v:
Soviet Physics Journal. 27:627-630
The effect of irradiation with 3.5-MeV electrons on the properties of GaAlAs-based light-emitting structures is investigated. It is shown that the considerable reduction in the intensity of light emitted as a result of electron irradiation is not acc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e2a82a9588f5bd196409c79a5387961
https://doi.org/10.1007/bf00897464
https://doi.org/10.1007/bf00897464
Publikováno v:
physica status solidi (b). 124:241-247
The spectral dependence is investigated of the light absorption coefficient, α, of GaAs subjected to a fast-neutron irradiation. In the tail region a complex dependence is found: three parts are seen each of which is described by an exponential depe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d91f79599fcdedb6c4aa1b87495d5cd2
https://doi.org/10.1002/pssb.2221240126
https://doi.org/10.1002/pssb.2221240126
Publikováno v:
Soviet Physics Journal. 31:66-70
The distribution of chromium and silicon in near-surface domains of semi-insulating gallium arsenide after annealing at different temperatures is investigated by the secondary ion method. It is shown that the surface of the specimens investigated is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05737b0f2e4aa605dd74f64912745a6f
https://doi.org/10.1007/bf00896690
https://doi.org/10.1007/bf00896690
Publikováno v:
physica status solidi (b). 110:33-37
Variations are studied of the electrical properties of n- and p-InSb induced by fast neutron irradiation (fluences from 1 × 1017 to 8 × 1019 n/m2). Temperature dependences of the concentration and mobility of the charge carriers is studied by the H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ca6a8166d3d603dc6908c07e59cdce6
https://doi.org/10.1002/pssb.2221100103
https://doi.org/10.1002/pssb.2221100103
Autor:
N. I. Kurdiani, Yu.I. Pashintsev, G.D. Bagratishvili, O.V. Saksaganski, V.A. Skorikov, R.B. Dzhanelidze
Publikováno v:
Thin Solid Films. 56:209-213
Some properties of GaAs and Ge3N4 metal-insulator-semiconductor (MIS) structures are presented. The static electrical characteristics of thin film MIS field-effect transistors (MISFETs) based on these structures are described. It is shown that the el
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d95375ea2e3c3d226e2bae581dcd7d75
https://doi.org/10.1016/0040-6090(79)90065-8
https://doi.org/10.1016/0040-6090(79)90065-8
Publikováno v:
Soviet Physics Journal. 27:95-97
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc1d7044620ebdf26bc187c2d52fd5fa
https://doi.org/10.1007/bf00900124
https://doi.org/10.1007/bf00900124
Publikováno v:
Journal of Chemical Physics; 7/14/2021, Vol. 155 Issue 2, p1-8, 8p