Zobrazeno 1 - 10
of 15
pro vyhledávání: '"N. I. Katsavets"'
Autor:
N. I. Katsavets, I. V. Kogan, A. R. Sabirov, V. B. Kulikov, I. V. Shukov, V. P. Chaly, D. V. Maslov, A. L. Dudin, A. A. Solodkov
Publikováno v:
Semiconductors. 52:1743-1747
The results of studying the photoelectric characteristics of an nBn structure are presented. The photodiodes based on such structures may have a cutoff wavelength as high as 5 μm. Calculations based on these results show that such photodiodes have a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4887451572c0de7a5bd53bf9478e8c4
https://doi.org/10.1134/s1063782618130110
https://doi.org/10.1134/s1063782618130110
Publikováno v:
Journal of Communications Technology and Electronics. 63:296-299
Photoelectric properties of different stressed InGaAs/AlGaAs heterostructures with quantum wells grown by the method of molecular beam epitaxy on GaAs substrates for mid-wavelength infrared largeformat photodetector arrays operating in the spectral r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d1d990b8d54e3b0e53b7e109a5316dd
https://doi.org/10.1134/s1064226918030063
https://doi.org/10.1134/s1064226918030063
Publikováno v:
Journal of Communications Technology and Electronics. 63:300-302
The characteristics of focal plane arrays (FPAs) based on (quantum-well infrared photodetector) QWIP structures with 384 × 288 elements spaced at the intervals 25 μm are investigated. The difference in spectral and current–voltage characteristics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2ad06603714d6fe82723aadc08153f7
https://doi.org/10.1134/s1064226918030026
https://doi.org/10.1134/s1064226918030026
Autor:
Ian Harrison, Eric C. Larkins, C. T. Foxon, N. I. Katsavets, Trevor M. Benson, G. M. Laws, Tin S. Cheng
Publikováno v:
Semiconductors. 32:1048-1053
A detailed study of the effect of rapid thermal annealing in a N2 or Ar atmosphere on the properties of thin GaN layers grown by molecular-beam epitaxy on sapphire substrates was performed. After rapid thermal annealing, an enhancement of the crystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::521fc6154fc1d263583dffbbc68550b8
https://doi.org/10.1134/1.1187579
https://doi.org/10.1134/1.1187579
Autor:
L. M. Fedorov, Yu. V. Zhilyaev, V. M. Botnaryuk, I. N. Goncharuk, Sergei V. Novikov, C. T. Foxon, Ian Harrison, Tin S. Cheng, N. J. Jeffs, Vasily V. Bel'kov, V.P Ulin, N. I. Katsavets
Publikováno v:
Journal of Crystal Growth. 187:29-34
We have studied the growth by hydride vapour phase epitaxy (HVPE) of GaN on GaN layers grown by molecular beam epitaxy (MBE) on sapphire and GaAs(1 1 1)B substrates. For growth on the GaN/sapphire composite substrates, the properties of the HVPE GaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc272067614881de36591f9a22b4e55e
https://doi.org/10.1016/s0022-0248(97)00859-2
https://doi.org/10.1016/s0022-0248(97)00859-2
Autor:
A. L. Ter-Martirosyan, M. O. Iskandarov, N. I. Katsavets, R. V. Leus, A. A. Nikitichev, D. M. Demidov, V. A. Buchenkov
Publikováno v:
Technical Physics Letters. 30:1039-1041
Highly efficient high-power quasi-continuous diode laser bars (DLBs) emitting in the region of λ=0.95 μm have been developed for pumping solid-state lasers based on Yb-containing active media. The parameters of DLBs and the results of long-term tes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::880ffcc2b22f6e350b932e0356e78638
https://doi.org/10.1134/1.1846851
https://doi.org/10.1134/1.1846851
Autor:
I. V. Kudryashov, V. P. Evtikhiev, R. K. Bauer, Dmitri Z. Garbuzov, T. E. Kudrik, N. I. Katsavets, V. B. Khalfin, Zh. I. Alferov, Dieter Bimberg, A. B. Komissarov
Publikováno v:
Journal of Applied Physics. 75:4152-4155
The paper reports a theoretical and experimental study of the dependence of the radiative recombination efficiency (ηi) on the GaAs quantum well width (Lz) in AlGaAs/GaAs quantum well structures with binary/binary superlattice confinement. Values of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4acb628f594ad6776ab58969020067cd
https://doi.org/10.1063/1.357002
https://doi.org/10.1063/1.357002
Autor:
D. M. Demidov, V. P. Chaly, A. N. Alekseev, É. G. Sokolov, N. I. Katsavets, A. L. Dudin, A. L. Ter-Martirosyan, S. B. Aleksandrov, A. P. Shkurko, I. V. Kogan, Yu. V. Pogorel’skii
Publikováno v:
Technical Physics Letters. 28:696-698
The parameters of high-power laser diodes operating at λ=0.94 μm, based on MBE-grown In0.1Ga0.9As/AlGaAs/GaAs quantum-dimensional heterostructures, are reported. The laser diodes manufactured using an optimized MBE technology and specially selected
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1941683d7d9345ee0e07448c75a83082
https://doi.org/10.1134/1.1505554
https://doi.org/10.1134/1.1505554
Publikováno v:
Quantum Electronics. 28:768-770
Powerful laser diodes, representing partly phase-locked laser arrays based on quantum-well heterostructures, were developed. The high temporal and spatial stability, and the long service life of such laser diodes make them suitable for optical pumpin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::085a5f55ce3abb1aa53f8b6a2586862a
https://doi.org/10.1070/qe1998v028n09abeh001322
https://doi.org/10.1070/qe1998v028n09abeh001322
Autor:
A. A. Nikitichev, A. L. Ter-Martirosyan, V. A. Buchenkov, É. G. Sokolov, M. O. Iskandarov, N. I. Katsavets
Publikováno v:
Technical Physics Letters. 34:46-47
High-power semiconductor radiation sources with a total optical output power of up to 5 kW and a power density of 400 W/cm2 have been developed, representing a vertical stack of quasi-continuous pulsed (500 μs) 100-W diode laser bars. Based on such
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1572cd427a3c0d3f828e269e4c880db1
https://doi.org/10.1134/s1063785008010148
https://doi.org/10.1134/s1063785008010148