Výsledky vyhledávání - "N. I. Bochkareva"

On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire

Autor: I. A. Sheremet, D. V. Tarkhin, V. Y. Davydov, Alexander N. Smirnov, Y. G. Shreter, N. I. Bochkareva, Andrey Leonidov, Y. S. Lelikov, M. V. Virko, F. E. Latishev, Andrey Zubrilov, Vladislav Voronenkov, A. V. Pinchuk, V. S. Kogotkov, R. I. Gorbunov

Publikováno v: Semiconductors. 51:115-121

The intense absorption of CO2 laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8dd163bc24aa758a9276a2a7b12da5d0
https://doi.org/10.1134/s1063782617010249

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Two modes of HVPE growth of GaN and related macrodefects

Autor: Horst P. Strunk, N. I. Bochkareva, Y. T. Rebane, Y. G. Shreter, U. W. Popp, Yuri Lelikov, A. I. Tsyuk, Philipp Latyshev, M. Strafela, Andrey Zubrilov, Vladislav Voronenkov, R. I. Gorbunov

GaN films with thickness up to 3 mm were grown by halide vapour phase epitaxy method. Two growth modes were observed: the high temperature (HT) mode and the low temperature (LT) mode. Films grown in HT mode had smooth surface, however the growth stre

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c2d385461d681c81c7c5cce4e4f8e0ea
http://arxiv.org/abs/1902.07164

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The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells

Autor: N. I. Bochkareva, Alexander M. Ivanov, V. A. Tarala, Yu. G. Shreter, A. V. Klochkov

Publikováno v: Technical Physics Letters. 42:1099-1102

It is shown that a short-time Joule heating of the active region of light-emitting diodes with InGaN/GaN quantum wells up to 125°C at a current density of 150 A/cm2 stimulates changes in the energy spectrum of defect states in the energy gap of GaN

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::69aa1182099600ac284e1c333562815b
https://doi.org/10.1134/s1063785016110146

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Efficiency droop in GaN LEDs at high injection levels: Role of hydrogen

Autor: I. A. Sheremet, Yu. G. Shreter, N. I. Bochkareva

Publikováno v: Semiconductors. 50:1369-1376

Point defects in GaN and, in particular, their manifestation in the photoluminescence, optical absorption, and recombination current in light-emitting diodes with InGaN/GaN quantum wells are analyzed. The results of this analysis demonstrate that the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::42c9223e79412dd572464f6ce00971b6
https://doi.org/10.1134/s1063782616100109

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On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n +-GaN substrates

Autor: R. I. Gorbunov, Yu. T. Rebane, V. Yu. Davydov, M. V. Virko, Vladislav Voronenkov, D. V. Tarhin, N. I. Bochkareva, Andrey Leonidov, Andrey Zubrilov, P. E. Latyshev, Alexander N. Smirnov, Yu. G. Shreter, V. S. Kogotkov, Yu. S. Lelikov

Publikováno v: Semiconductors. 50:699-704

The physical and technological basics of the method used to lift off lightly and moderately doped n-GaN films from heavily doped n+-GaN substrates are considered. The detachment method is based on the free-charge-carrier absorption of IR laser light,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::336a2d34633c31010ae9a30923ab102d
https://doi.org/10.1134/s1063782616050250

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Increase in the Shockley–Read–Hall recombination rate in InGaN/GaN QWs as the main mechanism of the efficiency droop in LEDs at high injection levels

Autor: Yu. G. Shreter, N. I. Bochkareva, Yu. T. Rebane

Publikováno v: Semiconductors. 49:1665-1670

It is shown that the efficiency droop observed as the current through a GaN-based light-emitting diode increases is due to a decrease in the Shockley–Read–Hall nonradiative lifetime. The lifetime decreases with increasing current because a steadi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::664b48a10f931675862d8563ff6bf408
https://doi.org/10.1134/s1063782615120040

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Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs

Autor: Yury Georgievich Shreter, Yu. T. Rebane, V. S. Kogotkov, Alexander M. Ivanov, M. V. Virko, A. V. Klochkov, N. I. Bochkareva

Publikováno v: Semiconductors. 49:827-835

It is shown that the emission efficiency and the 1/f noise level in light-emitting diodes with InGaN/GaN quantum wells correlate with how the differential resistance of a diode varies with increasing current. Analysis of the results shows that hoppin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f97f21af339cb5863db05f0dc296fec1
https://doi.org/10.1134/s1063782615060056

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