Zobrazeno 1 - 10 of 97 pro vyhledávání: '"N. Huby"'
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2-D Finite-Element Modeling of ZnO Schottky Diodes With Large Ideality Factors
Autor: M. Arcari, Paolo Lugli, G. Tallarida, N. Huby, Marek Godlewski, Tomasz A. Krajewski, E. Guziewicz, Giuseppe Scarpa
Publikováno v: I.E.E.E. transactions on electron devices 59 (2012): 2762–2766. doi:10.1109/TED.2012.2207459
info:cnr-pdr/source/autori:Arcari M, Scarpa G, Lugli P, Tallarida G, Huby N, Guziewicz E, Krajewski TA, Godlewski M/titolo:2-D Finite-Element Modeling of ZnO Schottky Diodes With Large Ideality Factors/doi:10.1109%2FTED.2012.2207459/rivista:I.E.E.E. transactions on electron devices/anno:2012/pagina_da:2762/pagina_a:2766/intervallo_pagine:2762–2766/volume:59
In this paper, we complement our previous work on the study of low-temperature rectifying junctions based on Ag/ZnO Schottky barriers. Diodes characterized by very high I-ON/I-OFF ratio and ideality factors considerably higher than unity, in disagree
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ddd62b134fe6ae4ae8eff9e1e8e3b0d
https://doi.org/10.1109/ted.2012.2207459
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3
Vertically stacked non-volatile memory devices – material considerations
Autor: Łukasz Wachnicki, Grazia Tallarida, Rafal Jakiela, S. Yatsunenko, Tomasz A. Krajewski, N. Huby, P. Kruszewski, Elzbieta Guziewicz, A. Wójcik-Głodowska, Jacek Szade, Krzysztof Kopalko, Marek Godlewski, S. Ferrari, E. Przedziecka
Publikováno v: Microelectronic engineering 85 (2008): 2434–2438.
info:cnr-pdr/source/autori:Godlewski, M; Guziewicz, E; Szade, J; Wojcik-Glodowska, A; Wachnicki, L; Krajewski, T; Kopalko, K; Jakiela, R; Yatsunenko, S; Przezdziecka, E; Kruszewski, P; Huby, N; Tallarida, G; Ferrari, S/titolo:Vertically stacked non-volatile memory devices-material considerations/doi:/rivista:Microelectronic engineering/anno:2008/pagina_da:2434/pagina_a:2438/intervallo_pagine:2434–2438/volume:85
Properties of ZnO films grown by atomic layer deposition at low temperature are described. By selecting appropriate precursors and their pulses we obtained films with controlled electrical properties - from heavily n-type to p-type. Parameters of con
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd105cf9654340806b5168af9ba38014
https://doi.org/10.1016/j.mee.2008.09.012
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4
PL and EL properties of oligo(p-phenylene vinylene) (OPPV) derivatives and their applications in organic light-emitting diodes (OLED)
Autor: Laurence Vignau, A. Chaieb, Guillaume Wantz, Christine Dagron-Lartigau, Ross Brown, N. Huby, Jeanne François
Publikováno v: Optical Materials. 31:68-74
This paper reports the photoluminescence properties and the performance enhancement of organic light-emitting diodes (OLEDs) of a series of well-defined p-conjugated rigid rod oligomers analogous to poly(p-phenylenevinylene) (PPV). They are based on
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fe8713d11f8dcc53bebeb5b78a4df532
https://doi.org/10.1016/j.optmat.2008.01.012
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5
X-ray synchrotron radiation probing of an ethylene diffusion flame
Autor: J.L. LeGarrec, James Mitchell, G. Taupier, N. Huby, C. Rebrion-Rowe, Michael Wulff
Publikováno v: Combustion and Flame. 131:308-315
Experimental results are presented from an experiment in which ionization created by a high energy X-ray synchrotron radiation beam intersecting an ethylene diffusion flame is measured. The ionization signal is believed to arise from X-ray absorption
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::841fec0a58dc1579cbbace082589622a
https://doi.org/10.1016/s0010-2180(02)00409-1
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6
Nanoparticle destruction by X-ray absorption
Autor: G. Taupier, Michael Wulff, N. Huby, J.L. LeGarrec, James Mitchell, C. Rebrion-Rowe
Publikováno v: Astronomy & Astrophysics. 386:743-747
X-ray absorption by nanometer sized soot particles in an ethylene flame has been studied using a beam from the ESRF synchrotron. This absorption appears to lead to the destruction of the particles. Application of this phenomenon to the release of mol
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::08c98cfa84d5980d78688c4f74ab2e6f
https://doi.org/10.1051/0004-6361:20020277
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7
New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices
Autor: M. Kutrzeba, N. Huby, Grazia Tallarida, S. Ferrari, Łukasz Wachnicki, Elzbieta Guziewicz, Marek Godlewski
Publikováno v: Microelectronic engineering 85 (2008): 2442–2444. doi:10.1016/j.mee.2008.07.016
info:cnr-pdr/source/autori:Huby, N; Tallarida, G; Kutrzeba, M; Ferrari, S; Guziewicz, E; Wachnicki, L; Godlewski, M/titolo:New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices/doi:10.1016%2Fj.mee.2008.07.016/rivista:Microelectronic engineering/anno:2008/pagina_da:2442/pagina_a:2444/intervallo_pagine:2442–2444/volume:85
We report on the fabrication of Schottky diodes based on n-type zinc oxide (ZnO) grown by atomic layer deposition (ALD) at low temperature (100 degrees C). These structures are suitable as selector elements in highly integrated non volatile memories
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::96ed659392e840f2f015e7b9256243c2
https://doi.org/10.1016/j.mee.2008.07.016
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8
ZnO based selectors for crossbar non-volatile memories
Autor: G. Tallarida, N. Huby, S. Spiga, M. Arcari, G. Csaba, P. Lugli, A. Redaelli, R. Bez
Publikováno v: E\PCOS 2010, Milano, Italy, September 6-7, 2010
info:cnr-pdr/source/autori:G. Tallarida, N. Huby, S. Spiga, M. Arcari, G. Csaba, P. Lugli, A. Redaelli, R. Bez/congresso_nome:E\PCOS 2010/congresso_luogo:Milano, Italy/congresso_data:September 6-7, 2010/anno:2010/pagina_da:/pagina_a:/intervallo_pagine
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::b86703a81c8ba55134b192ab1053b8a0
http://www.cnr.it/prodotto/i/251916
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9
Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications
Autor: Michele Perego, B. Kutrzeba-Kotowska, S. Ferrari, Frederik C. Krebs, Marek Godlewski, N. Huby, V. Osinniy, E. Katsia, G. Luka, Elzbieta Guziewicz, Grazia Tallarida
Publikováno v: Katsia, E, Huby, N, Tallarida, G, Kutrzeba-Kotowska, B, Perego, M, Ferrari, S, Krebs, F C, Guziewicz, E, Godlewski, M, Osinniy, V & Luka, G 2009, ' Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications ', Applied Physics Letters, vol. 94, no. 14, pp. 143501 . https://doi.org/10.1063/1.3114442
Hybrid poly(3-hexylthiophene)/ZnO devices are investigated as rectifying heterojunctions for microelectronics applications. A low-temperature atomic layer deposition of ZnO on top of poly(3-hexylthiophene) allows the fabrication of diodes featuring a
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7104fcf04493df4efc82c8bfa985b44f
https://orbit.dtu.dk/en/publications/cb96d0bf-569f-4254-8b6d-4dfaa6017abb
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10
Electrical behavior of zinc oxide layers grown by low temperature atomic layer deposition
Autor: S. Ferrari, N. Huby, Elzbieta Guziewicz, V. Osinniy, Marek Godlewski
Publikováno v: Applied physics letters 92 (2008).
info:cnr-pdr/source/autori:Huby, N; Ferrari, S; Guziewicz, E; Godlewski, M; Osinniy, V/titolo:Electrical behavior of zinc oxide layers grown by low temperature atomic layer deposition/doi:/rivista:Applied physics letters/anno:2008/pagina_da:/pagina_a:/intervallo_pagine:/volume:92
We report on the electrical properties of thin film transistors based on zinc oxide (ZnO) layers grown by low temperature (100-170 degrees C) atomic layer deposition. As evidenced through Hall effect measurements, a drastic decrease of the carrier co
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e0740e21d37d11f4c8bdc8c951bf883b
http://www.cnr.it/prodotto/i/3662
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