Zobrazeno 1 - 10
of 147
pro vyhledávání: '"N. Herres"'
Publikováno v:
Antimonide-Related Strained-Layer Heterostructures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e19ce94c84f8f7c64ca88dcda415a755
https://doi.org/10.1201/9780367810634-5
https://doi.org/10.1201/9780367810634-5
Publikováno v:
Applied Surface Science. 253:209-213
Structural defects and their impact on the performance, lifetime and reliability of electronic devices are of permanent interest for crystal growers and device manufacturers. This is especially true for epitaxial (Al, Ga)N/GaN based high electron mob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cb8234756fb14d9e7142cb6ddfc9d3e
https://doi.org/10.1016/j.apsusc.2006.05.091
https://doi.org/10.1016/j.apsusc.2006.05.091
Publikováno v:
Materials Science in Semiconductor Processing. 9:8-14
Structural defects and their impact on the performance of electronic devices are of permanent interest for crystal growers and device manufacturers. This is especially true for epitaxial (Al,Ga)N/GaN-based high electron mobility transistor structures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1d0a912a38325417a741c4353a3e697
https://doi.org/10.1016/j.mssp.2006.01.001
https://doi.org/10.1016/j.mssp.2006.01.001
Publikováno v:
Journal of Applied Crystallography. 38:183-192
The mosaic structure of an (Al,Ga)N layer grown on (0001) sapphire showing natural ordering was studied by high-resolution X-ray diffraction (HRXRD) reciprocal-space mapping. The direction-dependent mosaicity of the layer has been elaborated using ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec9236d5aa989b1ec924d3ee5b514af2
https://doi.org/10.1107/s0021889804030675
https://doi.org/10.1107/s0021889804030675
Publikováno v:
Materials Science and Engineering: B. :16-20
We report on full wafer and small area photoluminescence topography investigations of VGF GaAs:Si wafers. The wavelength-specific images exhibit various correlations and anti-correlations. Intensity variations due to competitive radiative and non-rad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9003dd9b3431fc000137a910733503f2
https://doi.org/10.1016/s0921-5107(01)00955-2
https://doi.org/10.1016/s0921-5107(01)00955-2
Publikováno v:
Materials Science and Engineering: B. :425-432
An extension of Bond's method for determining precision lattice parameters serves to determine the lattice parameters of (strained) unit cells of a film from the peak positions of the film alone. We call this measurement and evaluation procedure the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d5b3254bab196abb18b01289eebe4d5
https://doi.org/10.1016/s0921-5107(01)01036-4
https://doi.org/10.1016/s0921-5107(01)01036-4
Publikováno v:
Journal of Applied Physics. 90:5027-5031
Vibrational modes introduced by the incorporation of N into GaAs and GaInAs have been studied by Raman spectroscopy on samples grown by molecular-beam epitaxy using a rf nitrogen plasma source. When proceeding from GaAs(1-x)N(x) to Ga(1-y)In(y)As(1-x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f759cbb3e8a09302d60d9e3e2f19b0d5
https://doi.org/10.1063/1.1412277
https://doi.org/10.1063/1.1412277
Autor:
Marcel Rattunde, S. Simanowski, J. Schmitz, M Walther, C. Mermelstein, Joachim Wagner, N. Herres, Rudolf Kiefer, G Weimann
Publikováno v:
Journal of Crystal Growth. :595-599
The optimization of MBE growth conditions and layer structures for room temperature operation of 2.26mm AlGaAsSb/GaInAsSb laser structures is investigated. Index guided triple quantum well large optical cavity diode lasers with 64mm � 1000mm caviti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97197c5f505d8e5581f2810ee86f4a78
https://doi.org/10.1016/s0022-0248(01)00779-5
https://doi.org/10.1016/s0022-0248(01)00779-5
Publikováno v:
Journal of Applied Physics. 87:8522-8525
Raman spectroscopy and variable angle spectroscopic ellipsometry (SE) were used to study pseudomorphically strained GaAs1−xSbx layers (0.22⩽x⩽0.65) grown on InP by metal-organic chemical vapor deposition. From the Raman spectra the composition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a5d0589e305d17edf89eca3afe77979
https://doi.org/10.1063/1.373572
https://doi.org/10.1063/1.373572
The refractive index of AlxGa1−xAs below the band gap: Accurate determination and empirical modeling
Publikováno v:
Journal of Applied Physics. 87:7825-7837
The refractive indices of AlxGa1−xAs epitaxial layers (0.176⩽x⩽1) are accurately determined below the band gap to wavelengths, λ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b15d1639473dd3c939b42ca5e9a5334
https://doi.org/10.1063/1.373462
https://doi.org/10.1063/1.373462