Zobrazeno 1 - 10
of 18
pro vyhledávání: '"N. Hecking"'
Publikováno v:
Materials Science and Engineering: B. 15:187-191
Analytical expressions for ion ranges and range straggles of ions implanted into a solid state target are presented. The calculations are extended to the high energy case (up to about 1 GeV). It is assumed that the ions lose their energy only by elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::132cc3fdd51a928d3845847c152f0669
https://doi.org/10.1016/0921-5107(92)90053-c
https://doi.org/10.1016/0921-5107(92)90053-c
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 15:105-108
12 C and 14 N ions were implanted into silicon with intermediate energies between the validity regions of the LSS and Bethe-Bloch theories. Ranges were determined by optical reflectivity measurements at bevelled samples. A simple fitting formula for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b50c02608e84b37078364c52266c41c0
https://doi.org/10.1016/0168-583x(86)90263-6
https://doi.org/10.1016/0168-583x(86)90263-6
Publikováno v:
Materials Science and Engineering: B. 2:145-156
Lattice damage by megaelectronvolt ion implantation has been investigated using transmission electron microscopy (TEM) and depth-resolved measurements of the optical reflectivity change on bevelled samples. Generally, optical reflectivity depends on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::515df6abdf0dcb18c509933fad344195
https://doi.org/10.1016/0921-5107(89)90089-5
https://doi.org/10.1016/0921-5107(89)90089-5
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 15:760-764
Highly resolved damage depth profiles are determined by optical reflectivity measurements after small angle bevelling of the irradiated surface. The dose and temperature dependence of irradiation damage after 2 MeV Si → Si implantation up to doses
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::712d12418d12661c129cd64a7c59994f
https://doi.org/10.1016/0168-583x(86)90407-6
https://doi.org/10.1016/0168-583x(86)90407-6
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 43:170-175
The dynamic Monte Carlo simulation program HIDOS is presented, which simulates the slowing down of ions in amorphous solids, taking into account composition changes of the target during high dose ion bombardment. Depth profiles of 150 keV N ions in s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b23892845ebc8d6a3282e3b290653faa
https://doi.org/10.1016/0168-583x(89)90033-5
https://doi.org/10.1016/0168-583x(89)90033-5
Autor:
N. Hecking, E.H.Te Kaat
Publikováno v:
Applied Surface Science. 43:87-96
Radiation damage after high energy ion irradiation of silicon at temperatures up to 475 K has been investigated by optical reflectivity depth profiling. The damage development with dose is determined by different microprocesses, which are due to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b30a214e9ef33be5b7b9a8e83ca3da80
https://doi.org/10.1016/0169-4332(89)90195-5
https://doi.org/10.1016/0169-4332(89)90195-5
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 26:551-556
Radiation damage of crystalline silicon after 5 MeV Au-ion implantation at various temperatures has been studied by optical and electron microscopical methods. Damage at 450 K is analyzed in detail and discussed in comparison to that after 2 MeV Si s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19685fa02ead6bf890226af8b9e7cc7d
https://doi.org/10.1016/0168-583x(87)90541-6
https://doi.org/10.1016/0168-583x(87)90541-6
Publikováno v:
EPM 87. Energy Pulse and Particle Beam Modification of Materials ISBN: 9783112611203
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6324b99bbdf894a0a3f1d6b1c1ffa71
https://doi.org/10.1515/9783112611203-136
https://doi.org/10.1515/9783112611203-136
Autor:
N. Hecking, E. te Kaat
Publikováno v:
EPM 87. Energy Pulse and Particle Beam Modification of Materials ISBN: 9783112611203
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e547921b0cf440d9e8d21990e29152b4
https://doi.org/10.1515/9783112611203-026
https://doi.org/10.1515/9783112611203-026
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