Zobrazeno 1 - 10
of 672
pro vyhledávání: '"N. HOLONYAK"'
Publikováno v:
Journal of Applied Physics. 79:8204-8209
Data are presented on the photopumped laser operation of planar AlAs–GaAs superlattice (SL) minidisk lasers. The SL minidisk (70 A AlAs, 30 A GaAs; 100 periods; ∼37 μm diameter) is defined by impurity‐induced layer disordering (IILD), followed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51738b957b9cd0bf854607b521c07063
https://doi.org/10.1063/1.362460
https://doi.org/10.1063/1.362460
Publikováno v:
Applied Physics Letters. 80:3045-3047
Data are presented on the coupled-stripe laser operation (continuous wave, 300 K) of a single InAs quantum-dot (QD) layer coupled via a thin (5 A) GaAs barrier to an auxiliary strained InGaAs quantum well (QW) grown (confined) in an AlGaAs–GaAs het
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3576d708305fe9a1619a3534c3f1147
https://doi.org/10.1063/1.1473686
https://doi.org/10.1063/1.1473686
Publikováno v:
Applied Physics Letters. 80:1126-1128
Data are presented showing that a single-layer InAs quantum dot (QD) laser in the AlGaAs–GaAs–InGaAs–InAs heterostructure system is improved in gain and continuous wave (cw) room temperature operation by coupling, via tunneling, auxiliary strai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0078ef13d7686cb34b4f46a99ccc62f
https://doi.org/10.1063/1.1451989
https://doi.org/10.1063/1.1451989
Publikováno v:
Applied Physics Letters. 79:4500-4502
Data are presented showing that, besides the improvement in carrier collection, it is advantageous to locate strain-matching auxiliary InGaAs layers [quantum wells (QWs)] within tunneling distance of a single-quantum-dot (QD) layer of an AlGaAs–GaA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3826567526fac0d1807c4971bd31dcf1
https://doi.org/10.1063/1.1430025
https://doi.org/10.1063/1.1430025
Autor:
N. Holonyak, D. A. Kellogg
Publikováno v:
Applied Physics Letters. 78:2202-2204
Data are presented on coupled ten-stripe AlGaAs–GaAs–InGaAs quantum well heterostructure (QWH) lasers recoupled stochastically at the cleaved end mirrors. Recoupling of neighboring elements of a ten-stripe laser is accomplished by the scattering
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c60df761db90a4473d99d2dceed448ab
https://doi.org/10.1063/1.1363691
https://doi.org/10.1063/1.1363691
Publikováno v:
Journal of Applied Physics. 72:5318-5324
Measurements of the hole density in carbon‐doped GaAs and AlxGa1−xAs as a function of the annealing temperature are presented. It is shown that after sample annealing at low temperatures (T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f9eb54e11291d93a469e8e426cdb727
https://doi.org/10.1063/1.352017
https://doi.org/10.1063/1.352017
Autor:
N. Holonyak
Publikováno v:
American Journal of Physics. 68:864-866
Simple diagrams are used to show the transformation of a thin “slab” of intrinsic semiconductor (direct gap, kelec=khole) from an ideal “flat-band” photopumped recombination-radiation light source into an ultimate lamp, a p–n junction light
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80e75bf11b571d2e2e8d4c9d6da3fbce
https://doi.org/10.1119/1.1301966
https://doi.org/10.1119/1.1301966
Autor:
P. W. Evans, N. Holonyak
Publikováno v:
Applied Physics Letters. 71:261-263
Data are presented on the planar (top–down) oxidation of graded AlxGa1−xAs upper confining layers of quantum well heterostructures in order to realize high resolution square-edge lasers (or waveguides). A model is developed to facilitate composit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e006c2eb24595023ea7f623a9a6f3fd
https://doi.org/10.1063/1.119918
https://doi.org/10.1063/1.119918
Autor:
N. Holonyak, P. W. Evans
Publikováno v:
Applied Physics Letters. 69:2391-2393
Data are presented on the room temperature photopumped laser operation of GaAs–AlAs superlattice microrings in single, coupled pair, and coupled hexagonal‐ring configurations. The lasers are fabricated from a GaAs–AlAs superlattice (Lz∼30 A,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2680b3a774e46a40c0335bbbda7e11d
https://doi.org/10.1063/1.117647
https://doi.org/10.1063/1.117647
Publikováno v:
Applied Physics Letters. 68:2035-2037
Data are presented demonstrating photopumped laser operation of a planar photonic lattice (∼1 μm thick) that is comprised of 9 μm disks with 2 μm separation arranged in a two‐dimensional hexagonal close‐packed pattern. The active region of e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6b0743bfdc504bf0ad13270d301f977
https://doi.org/10.1063/1.116294
https://doi.org/10.1063/1.116294