Zobrazeno 1 - 5
of 5
pro vyhledávání: '"N. H. Mohd. Noor"'
Autor:
W S, Wan Ab Rahman, W Z, Abdullah, M N, Hassan, S, Ahmed, Z, Zulkafli, W A, Wan Ahmed, S, Iberahim, N H, Mohd Noor
Publikováno v:
The Malaysian journal of pathology. 43(3)
Plasma protein-C is a natural anticoagulant that inactivates factors Va and VIIIa. Familial protein C deficiency is inherited as an autosomal dominant disorder. The homozygous or compound heterozygous type may present early as purpura fulminant, whil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::106d304257c809e5ac8f88cea94bda2e
https://pubmed.ncbi.nlm.nih.gov/34958066
https://pubmed.ncbi.nlm.nih.gov/34958066
Autor:
M Z, Hassan, S, Iberahim, W S W, Abdul Rahman, Z, Zulkafli, R, Bahar, M, Ramli, N H, Mohd Noor, R, Mustaffa
Publikováno v:
The Malaysian journal of pathology. 41(1)
Anti-D alloimmunisation may occur from the blood transfusion or fetomaternal haemorrhage which can lead to haemolytic disease of fetal and newborn (HDFN). The morbidity and mortality of HDFN related to anti-D is significantly reduced after introducti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::1ca351f7a2f76bdab23c2161e37ce754
https://pubmed.ncbi.nlm.nih.gov/31025639
https://pubmed.ncbi.nlm.nih.gov/31025639
Autor:
N. H. Mohd. Noor, U. Hashim, M. E. A. Shohini, A. M. Mohamed Nuri, Mohamad Rusop, Tetsuo Soga
Publikováno v:
AIP Conference Proceedings.
In this study, we present a simple method to form a nanogap between two silicon contacts separated by a thin oxide gap. We also demonstrate the validity of dielectric spectroscopy results of two wafer samples (different oxide thickness), and we show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbef1d3f5e5f3705e418c7fe80bc0ac5
https://doi.org/10.1063/1.3160193
https://doi.org/10.1063/1.3160193
Publikováno v:
2006 IEEE International Conference on Semiconductor Electronics.
This article presents the studies of Pt Schottky contact on porous n-type GaN for hydrogen sensing. Porous GaN was generated by UV assisted electroless chemical etching. Hydrogen sensor was subsequently fabricated by depositing Pt Schottky contacts o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d5313518c358b019dc2bdd068c59c7a
https://doi.org/10.1109/smelec.2006.380780
https://doi.org/10.1109/smelec.2006.380780
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