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pro vyhledávání: '"N. H. L. Goh"'
Publikováno v:
Journal of Advanced Dielectrics, Vol 4, Iss 1, Pp 1350026-1-1350026-5 (2014)
This paper describes recent device developments with relaxor ferroelectric Pb(Zn1/3Nb2/3)O3–PbTiO3 (PZN–PT) single crystals carried out at Microfine Materials Technologies Pte. Ltd, Singapore. Promising [011]-poled transverse cuts of PZN–PT sin
Externí odkaz:
https://doaj.org/article/303f6dee5a084cd5a177969dc8d00504
