Zobrazeno 1 - 10
of 67
pro vyhledávání: '"N. Georgoulas"'
Publikováno v:
Active and Passive Electronic Components, Vol 20, Iss 4, Pp 225-234 (1998)
The a-SiC/c-Si(n) isotype heterojunction has been studied as a temperature sensor by measuring its reverse current-voltage (IR−V) and reverse voltage-temperature (V-T) characteristics, as well as its reverse current temperature dependence. The IR
Externí odkaz:
https://doaj.org/article/b569546527ff487980926cf16cd441ce
Publikováno v:
Active and Passive Electronic Components, Vol 19, Iss 1, Pp 59-71 (1996)
The electrical and optical characteristics of the new high-speed Al/a-Si/c-Si(p)/c-Si(n+)/Al and Al/a- SiC/c-Si(p)/c-Si(n+)/Al optically controlled switches are presented in this paper. These switches exhibit the lowest ever reported values of rise a
Externí odkaz:
https://doaj.org/article/47341c9cf91c4055863af63aec5e63f1
Publikováno v:
Active and Passive Electronic Components, Vol 16, Iss 1, Pp 55-64 (1993)
In the present work a study of the electrical properties of heterojunctions between rf sputtered amorphous silicon carbide (a-SiC) thin films and n-type crystalline silicon (c-Si) substrates is reported. The current-voltage (I-V) and capacitance-volt
Externí odkaz:
https://doaj.org/article/86f69dd102054d869e8800403b9dc4c9
Publikováno v:
Water, Air, & Soil Pollution. 223:5841-5854
The ability of iron oxides (goethite) and natural zeolite (clinoptilolite) to adsorb copper from its aqueous solutions was extensively studied in the past. In this paper, the production of modified zeolites (systems I and II) from raw materials of ze
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6ec74bac331af03b162a72b83b110df
https://doi.org/10.1007/s11270-012-1320-4
https://doi.org/10.1007/s11270-012-1320-4
Publikováno v:
Electrical Engineering (Archiv fur Elektrotechnik). 83:203-211
This paper presents an analytical model for the dc electrical behavior of bulk barrier diodes (BBD's). The proposed model extends previously published models, and includes analytical expressions for all significant quantities of the device dc perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::232d88e97634e1a193ddc4bad8357180
https://doi.org/10.1007/s002020100078
https://doi.org/10.1007/s002020100078
Publikováno v:
Superlattices and Microstructures. 23:407-411
Heterostructures of Si0.80Ge0.20/Si (100) were grown by pulsed laser deposition consisting of alternating 10 nm SiGe and silicon layers for a total of 10 periods. The presence of alloy clustering at SiGe/Si interfaces was investigated by parallel tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5db00095f121a88d450a25135f1dac30
https://doi.org/10.1006/spmi.1996.0350
https://doi.org/10.1006/spmi.1996.0350
Publikováno v:
Microelectronics, Microsystems and Nanotechnology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30686e1fd4a744b15524aa4e93e4f0ba
https://doi.org/10.1142/9789812810861_0026
https://doi.org/10.1142/9789812810861_0026
Publikováno v:
Electronics Letters. 28:1937
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d298c60acb3358867168fdc265ccb323
https://doi.org/10.1049/el:19921241
https://doi.org/10.1049/el:19921241
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Akademický článek
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