Zobrazeno 1 - 2
of 2
pro vyhledávání: '"N. G. Lezhava"'
Publikováno v:
Technical Physics Letters. 31:75-76
A new method for insulating the active elements of GaAs-based integrated circuits (ICs) is proposed, which is based on the use of intrinsic gallium arsenide oxide formed by plasma anodizing assisted with UV irradiation. This insulation provides a sig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08ee261ad0fcf9734221b25fca218377
https://doi.org/10.1134/1.1859506
https://doi.org/10.1134/1.1859506
Publikováno v:
Measurement Techniques. 14:270-273
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9bf2464445755ecd19e3fd3de815cd67
https://doi.org/10.1007/bf00994699
https://doi.org/10.1007/bf00994699