Zobrazeno 1 - 3
of 3
pro vyhledávání: '"N. G. Karpukhina"'
Autor:
N. D. Il’inskaya, M.A. Remennyi, N.M. Stus, B. A. Matveev, Pavel N. Brunkov, N. G. Karpukhina, S. A. Karandashev, A.A. Usikova, A.A. Lavrov
Publikováno v:
Infrared Physics & Technology. 76:542-545
P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure photodiodes with linear impurity distribution in the space charge region have been fabricated and studied. The photodiodes showed good perspectives for use in low temperature pyrometry as low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad6ddbb2429ff1502f764938f7aa48c2
https://doi.org/10.1016/j.infrared.2016.04.002
https://doi.org/10.1016/j.infrared.2016.04.002
Photodiode 1 × 64 linear array based on a double p-InAsSbP/n-InAs0.92Sb0.08/n +-InAs heterostructure
Autor:
M. A. Remennyi, A. A. Lavrov, N. D. Il’inskaya, N. G. Karpukhina, S. A. Karandashev, B. A. Matveev, N. M. Stus, A. A. Usikova
Publikováno v:
Semiconductors. 50:646-651
The results of studies of the current–voltage characteristics and of the photoelectric and luminescence properties of a monolithic diode 1 × 64 linear array based on p-InAsSbP/n-InAsSb/n +-InAs with the n +-InAs-substrate side illuminated and sens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dfd1772b67add8d1f26e39b74d75c6d3
https://doi.org/10.1134/s1063782616050122
https://doi.org/10.1134/s1063782616050122
Publikováno v:
Journal of Physical Chemistry B; Sep2007, Vol. 111 Issue 35, p10413-10420, 8p