Zobrazeno 1 - 10
of 18
pro vyhledávání: '"N. G. Grigor'ev"'
Autor:
A. V. Kobylyatskii, Anna B. Boruzdina, I. I. Shvetsov-Shilovskii, A. V. Ulanova, N. G. Grigor’ev, Yu. M. Gerasimov
Publikováno v:
Russian Microelectronics. 48:268-272
This article deals with a study of radiation-induced leakages between n-regions of various types using test structures fabricated according to the 0.18-µm CMOS technology. It is shown that, depending on the radiation exposure dose, the leakages betw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::120dca838cdb0f9cc9b81a8f460c6833
https://doi.org/10.1134/s1063739719030028
https://doi.org/10.1134/s1063739719030028
Publikováno v:
Russian Microelectronics. 43:96-101
An analysis of factors influencing operational reliability of memory chips has been performed. Different topological configurations of 6-transistors memory cells have been considered. Two configurations of cells most sensitive to the influence of mul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1797e2d4201e6413ec28596d0322222
https://doi.org/10.1134/s1063739714020036
https://doi.org/10.1134/s1063739714020036
Publikováno v:
Russian Microelectronics. 41:259-265
A technique for investigating CMOS memory chips under exposure to ionizing radiation and the results of their radiation tests are presented. Possible mechanisms of degradation and approaches to increasing the radiation resistance of integrated circui
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cc7034cf88124f56cb2cebfdd346395
https://doi.org/10.1134/s106373971204004x
https://doi.org/10.1134/s106373971204004x
Publikováno v:
2015 International Siberian Conference on Control and Communications (SIBCON).
The paper analyzes the effectiveness of test algorithms of different duration during the functional control of static random access memory (SRAM) during the exposure to total ionizin dose (TID). The results of experimental research SRAM chips using a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6dc6688471bb0cda32e1b1ff6aca507
https://doi.org/10.1109/sibcon.2015.7147007
https://doi.org/10.1109/sibcon.2015.7147007
Publikováno v:
Russian Microelectronics. 35:162-176
The dominant mechanisms are analyzed of transient-radiation upset in CMOS RAM VLSI circuits realized in SOS technology. Data reliability under transient irradiation is discussed in relation to photocurrents, rail-span collapse, and the circuit and la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::298e6743d6b9398afe4c8691db030b10
https://doi.org/10.1134/s106373970603005x
https://doi.org/10.1134/s106373970603005x
Publikováno v:
Doklady Akademii nauk SSSR. 310(6)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::9ed4b679cee4755e3eec809fed7797f5
https://pubmed.ncbi.nlm.nih.gov/2354660
https://pubmed.ncbi.nlm.nih.gov/2354660
Publikováno v:
Neurophysiology. 18:238-243
The modifying effect of adding serotonin to the intra- and extracellular environment on the inward currents generated by the cell following intracellular application of acetylcholine was shown during studies on unidentified isolatedLimnaea stagnalis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d327a04cb22e3c7b6ec000da1c15291
https://doi.org/10.1007/bf01052542
https://doi.org/10.1007/bf01052542
Publikováno v:
Klinicheskaia khirurgiia. (4)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::accb6aec071cebb06fd59c87032e7715
https://pubmed.ncbi.nlm.nih.gov/3404880
https://pubmed.ncbi.nlm.nih.gov/3404880
Autor:
N G, Grigor'ev, Iu B, Shmukler
Publikováno v:
Doklady Akademii nauk SSSR. 287(2)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::eb4eb227e2893313de33152e7e3ea03f
https://pubmed.ncbi.nlm.nih.gov/3009116
https://pubmed.ncbi.nlm.nih.gov/3009116
Publikováno v:
Doklady Akademii nauk SSSR. 274(4)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::02a397b5891b1304e328ae4c4133e77b
https://pubmed.ncbi.nlm.nih.gov/6734415
https://pubmed.ncbi.nlm.nih.gov/6734415