Zobrazeno 1 - 10
of 292
pro vyhledávání: '"N. G. CHU"'
Autor:
David Norton, S. N. G. Chu, Soohwan Jang, Brent P. Gila, J. W. Dong, Andrei Osinsky, S. Rawal, Travis J. Anderson, Jau-Jiun Chen, Stephen J. Pearton, Yuanjie Li, Hyun-Sik Kim, Ren Fan
Publikováno v:
ECS Transactions. 2:153-172
To create efficient ZnO-based LEDs, it is important to develop practical etching process and optimize Ohmic contacts on ZnO. Wet etch rates at 25{degree sign}C for Zn0.95Cd0.05O grown on sapphire substrates by rf plasma-assisted molecular beam epitax
Autor:
Soohwan Jang, Hyun-Sik Kim, David P. Norton, Stephen J. Pearton, Yuanjie Li, S. N. G. Chu, Jason F. Weaver, Jau-Jiun Chen, Andrei Osinsky, Fan Ren
Publikováno v:
Journal of Electronic Materials. 35:516-519
Wet etch rates at 25°C for Zn0.9Mg0.1O grown on sapphire substrates by pulsed laser deposition (PLD) were in the range 300–1100 nm · min−1 with HCl/H2O (5×10−3−2×10−2 M) and 120–300 nm · min−1 with H3PO4/H2O (5×10−3−2×10−2
Autor:
B. S. Kang, Mark Sheplak, Brent P. Gila, G.-T. Chen, Fan Ren, J.-I. Chyi, S. Kim, J. Kim, R. Mehandru, C. R. Abernathy, Chang Chi Pan, K.H. Baik, Stephen J. Pearton, Toshikazu Nishida, V. Chandrasekaran, S. N. G. Chu
Publikováno v:
physica status solidi (c). 2:2684-2687
Nitride High Electron Mobility Transistor(HEMT) structures are excellent candidates for polar liquid detectors, pressure sensors and piezoelectric-related applications. The changes in conductance of the channel of AlGaN/GaN high electron mobility tra
Autor:
B. S. Kang, Suku Kim, S N G Chu, Stephen J. Pearton, C. R. Abernathy, Fan Ren, Brent P. Gila, Jenshan Lin
Publikováno v:
Journal of Physics: Condensed Matter. 16:R961-R994
There is renewed emphasis on development of robust solid-state sensors capable of uncooled operation in harsh environments. The sensors should be capable of detecting chemical, gas, biological or radiation releases as well as sending signals to centr
Autor:
Steve Pearton, C. R. Abernathy, Robert G. Wilson, S. N. G. Chu, Arthur F. Hebard, J. Kelly, R. Rairigh
Publikováno v:
Journal of Physics D: Applied Physics. 37:511-517
Ion implantation is a valuable tool for introducing transition metal ions such as Cr, Mn, Fe, Co and Ni into a variety of semiconductors including AlN, GaN, GaP and SiC. High-transition-temperature ferromagnetic behaviour is found to be the rule rath
Publikováno v:
Journal of Applied Physics. 93:4512-4516
We report on the magnetic and structural properties of epitaxial metal organic chemical vapor deposition grown p-GaN:Mg/Al2O3 implanted with Co, Cr, and V ions at varying high doses at 350 °C. Magnetic and structural properties were investigated aft
Autor:
Arthur F. Hebard, C. R. Abernathy, S. J. Pearton, Robert G. Wilson, S. N. G. Chu, Alexander Y. Polyakov, Nikoleta Theodoropoulou, M. E. Overberg, L. D. Zhu, V. Fuflyigin, Andrei Osinsky
Publikováno v:
Journal of Applied Physics. 92:2047-2051
Epitaxial layers of ZnSiN2, ZnGe0.65Si0.35N2, and ZnGe0.31Si0.69N2 grown on Al2O3 substrates were implanted at 350 °C with high doses (5×1016 cm−2) of Mn+ ions and annealed at 700 °C. The implanted region did not appear to become amorphous and s
Autor:
Henryk Temkin, Vladimir Kuryatkov, B. Borisov, Sergey A. Nikishin, G. Kipshidze, Mark Holtz, S. N. G. Chu
Publikováno v:
physica status solidi (a). 192:286-291
Ultraviolet light-emitting diodes (LEDs) with emission wavelength as short as 280 nm, grown by gas source molecular beam epitaxy with ammonia, are described. The typical multi-quantum well (MQW) structure LED consists of an AlN buffer layer deposited
Autor:
Horst Stormer, Michael J. Manfra, L.J. Mahoney, Wei Pan, K.M. Molvar, D. V. Lang, L. N. Pfeiffer, Ken W. West, Sheyum Syed, Richard J. Molnar, Julia W. P. Hsu, Glen R. Kowach, Nils Weimann, S. N. G. Chu, A. M. Sergent, J. Caissie
Publikováno v:
Journal of Applied Physics. 92:338-345
We report on an extensive study of the growth and transport properties of the two-dimensional electron gas (2DEG) confined at the interface of AlGaN/GaN heterostructures grown by molecular beam epitaxy (MBE) on thick, semi-insulating GaN templates pr
Autor:
S. N. G. Chu, M. E. Overberg, C. R. Abernathy, J. M. Zavada, Stephen J. Pearton, Robert G. Wilson, Nikoleta Theodoropoulou, Arthur F. Hebard
Publikováno v:
Materials Science and Engineering: B. 94:14-19
Structural and magnetic characteristics of Ni-implanted GaP were measured for doses in the range 3/5/10 16 cm 2 . After subsequent annealing at 700 8C, transmission electron microscopy (TEM) showed residual lattice damage which was more significant i