Zobrazeno 1 - 10
of 12
pro vyhledávání: '"N. G. Asmar"'
Autor:
Andrea Markelz, N. G. Asmar, Elisabeth G. Gwinn, Arthur C. Gossard, John Cerne, P. F. Hopkins, Mark S. Sherwin, K. L. Campman
Publikováno v:
Physical Review B. 51:18041-18044
We present experimental studies of energy loss from quasi-two-dimensional electron gases that are driven to a nonequilibrium steady state by intense, ultrahigh-frequency fields. For the ${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath
Autor:
Elisabeth G. Gwinn, Mark S. Sherwin, Andrea Markelz, Chanh Nguyen, N. G. Asmar, Herbert Kroemer
Publikováno v:
Semiconductor Science and Technology. 9:634-637
Large third-order, free-carrier nonlinear susceptibilities, X(3) (to approximately 0.2 esu), and subcubic dependence of the third-harmonic power on the incident intensity, have been observed between 19 cm-1 and 23 cm-1 for InAs/AlSb quantum wells wit
Autor:
John Francis Dobson, P. R. Pinsukanjana, Arthur C. Gossard, N. G. Asmar, Esther L. Yuh, Mani Sundaram, Elisabeth G. Gwinn
Publikováno v:
Physical Review B. 46:7284-7287
We report studies of the surface plasmon modes of a layer of electron gas that is embedded in a wider, effective positive background, provided by a parabolic Al x Ga 1-x As well. Although conditions in the interior of the electron gas are nearly iden
Publikováno v:
Applied Physics Letters. 72:2439-2441
We have measured energy relaxation and longitudinal-optical (LO) phonon emission times in modulation-doped InAs quantum wells driven by high dc fields, and by intense ac fields at frequencies from 0.49 to 0.66 terahertz. We find that for electron tem
Publikováno v:
Scopus-Elsevier
Experimental studies of InAs heterostructures illuminated by far‐infrared (FIR) radiation reveal an abrupt increase in the charge density for FIR intensities above a threshold value that rises with increasing frequency. We attribute this charge den
Autor:
Mark S. Sherwin, Andrea Markelz, John Cerne, K. L. Campman, Elisabeth G. Gwinn, N. G. Asmar, Arthur C. Gossard
Publikováno v:
Applied Physics Letters. 68:829-831
We use photoluminescence to study the time‐average energy distribution of electrons in the presence of strong steady‐state drive at terahertz (THz) frequencies, in a modulation‐doped 125 A AlGaAs/GaAs square well that is held at low lattice tem
Publikováno v:
Semiconductor Science and Technology. 9:828-830
We report 4.2 K studies of the dependence of the in-plane, DC conductivity of a quasi 2D electron gas on the amplitude Eomega of applied fields with frequencies from 0.25 THz to 3.5 THz. We analyse the dependence of sigma DC on Eomega assuming that e
Autor:
P. F. Hopkins, B. Galdrikian, Elisabeth G. Gwinn, William W. Bewley, Andrea Markelz, Arthur C. Gossard, C. L. Felix, N. G. Asmar, Björn Birnir, Mark S. Sherwin, K. Craig, Mani Sundaram
Publikováno v:
SPIE Proceedings.
Electrons in semiconductor nanostructures such as quantum wells can exhibit a highly nonlinear response to far-infrared radiation of sufficient intensity, such as can be supplied by the free-electron lasers (FELs) at UCSB. Several different physical
Publikováno v:
Physical Review B. 39:6612-6614
The T/sub c/ of Bi/sub 2/-Ca-Sr/sub 2/-Cu/sub 2/-O/sub 8-//sub x/ can be shifted reversibly over a rangel of at least 15 K by changing the oxygen concentration. T/sub c/ shifts downward for increased oxygen content. This is opposite to the shift seen
Autor:
Robert M. Hazen, David R. Veblen, Charles T. Hultgren, N. G. Asmar, Donald E. Morris, Ulrich M. Scheven, John Y. T. Wei, Janice H. Nickel, Jeffrey E. Post, Peter J. Heaney, Andrea Markelz, Jeffrey S. Scott
Publikováno v:
Physical review. B, Condensed matter. 39(10)