Zobrazeno 1 - 10
of 79
pro vyhledávání: '"N. Furutake"'
Autor:
Yusuke Hayashi, Tsuneo Takeuchi, M. Tagami, M. Abe, Makoto Ueki, N. Furutake, Shuichi Saito, M. Narihiro, Munehiro Tada, T. Onodera, Naoya Inoue, H. Yamamoto, Fuminori Ito
Publikováno v:
IEEE Transactions on Electron Devices. 56:1579-1587
A low oxygen content (LOC) CuAl alloy with no barrier metal (Ta) oxidation was obtained using an oxygen absorption process based on metallurgical thermodynamic principles. LOC CuAl dual damascene interconnects (DDIs) were successfully implemented int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::853b6d9945ed7d915af1b46f17568007
https://doi.org/10.1109/ted.2009.2022677
https://doi.org/10.1109/ted.2009.2022677
Autor:
Fuminori Ito, Hiroto Ohtake, Noriaki Oda, K. Arai, Munehiro Tada, Tsuneo Takeuchi, Yoshiko Kasama, M. Narihiro, T. Taiji, Yoshihiro Hayashi, M. Sekine, N. Furutake
Publikováno v:
IEEE Transactions on Electron Devices. 54:797-806
A feasibility study was done for 45-nm-node Cu interconnects using a novel molecular-pore-stacking (MPS) SiOCH film (k = 2.45), taking electron scattering in the scaled-down Cu lines into consideration. The as-deposited MPS SiOCH film, formed by plas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a795447bc01edbf24f6d176201846341
https://doi.org/10.1109/ted.2007.892357
https://doi.org/10.1109/ted.2007.892357
Autor:
Yoshihiro Hayashi, H. Sunamura, A. Mitsuiki, Takashi Hase, Y. Yabe, Toshiharu Nagumo, K. Uejima, A. Tanabe, K. Masuzaki, S. Saito, M. Narihiro, Koichi Takeda, M. Saitoh, Kiyoshi Takeuchi, Nobuyuki Ikarashi, T. Yamamoto, Makoto Ueki, N. Furutake
Publikováno v:
VLSIC
A low-power 2Mb ReRAM macro was developed in 90 nm CMOS platform, demonstrating lower power data-writing (x1/7) and faster data-reading (x2∼3) as compared to a conventional flash. The memory window at −6σ for 10 years was confirmed with a high-s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::088bfdc776dc3920a77a2af3ac9acf21
https://doi.org/10.1109/vlsit.2015.7223640
https://doi.org/10.1109/vlsit.2015.7223640
Autor:
M. Hiroi, Naoya Inoue, Yusuke Hayashi, T. Onodera, N. Furutake, Makoto Ueki, Nobuyuki Ikarashi
Publikováno v:
IEEE Transactions on Electron Devices. 51:1883-1891
We investigated the effects of a Ti addition on the reliability and the electrical performance of Cu interconnects, comparing three different ways of Ti addition such as A) Ti layer insertion under Ta-TaN stacked barrier metal, B) Ti layer insertion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4dd37916e829523c208f10f2478c1e3
https://doi.org/10.1109/ted.2004.837579
https://doi.org/10.1109/ted.2004.837579
Publikováno v:
Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::816040385022e56376f0467a02c8f8d8
https://doi.org/10.7567/ssdm.2014.g-2-4
https://doi.org/10.7567/ssdm.2014.g-2-4
Autor:
Yoshihiro Hayashi, S. Saito, M. Narihiro, Hiroshi Sunamura, Naoya Inoue, N. Furutake, Masami Hane
Publikováno v:
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
Enhanced current drivability of BEOL-process-compatible dual-oxide complementary BEOL-FETs on LSI-interconnects (Fig. 1) with just two additional masks to the state-of-the-art BEOL process is demonstrated, aiming at high-V bd pre-driver operation. We
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdfda24db757474cf9f0361fe7a578e2
https://doi.org/10.1109/vlsit.2014.6894426
https://doi.org/10.1109/vlsit.2014.6894426
Autor:
S. Saito, Hiroshi Sunamura, M. Narihiro, Jun Kawahara, Kishou Kaneko, Naoya Inoue, Yoshihiro Hayashi, Masami Hane, N. Furutake
Publikováno v:
Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f8c1cd8e97a00a09550cfb9390d60d4
https://doi.org/10.7567/ssdm.2013.g-6-1
https://doi.org/10.7567/ssdm.2013.g-6-1
Publikováno v:
Extended Abstracts of the 2013 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b35ab133d3d0d695d4646eeb7c89c976
https://doi.org/10.7567/ssdm.2013.j-5-5l
https://doi.org/10.7567/ssdm.2013.j-5-5l
Autor:
S. Saito, Nobuyuki Ikarashi, M. Narihiro, Yoshihiro Hayashi, Hiroshi Sunamura, Masami Hane, Kishou Kaneko, N. Furutake
Publikováno v:
2012 International Electron Devices Meeting.
A new P-type amorphous SnO thin-film transistor with high I on /I off ratio of >104 is developed, for the first time, as a component to complement N-type IGZO transistors for on-chip voltage-bridging BEOL-CMOS I/Os on conventional Si-LSI Cu-interconn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1a1229e069da958693cb7ae118fd4fe
https://doi.org/10.1109/iedm.2012.6479070
https://doi.org/10.1109/iedm.2012.6479070
Autor:
M. Narihiro, Hiroshi Sunamura, N. Furutake, S. Saito, Yoshihiro Hayashi, Masami Hane, Kishou Kaneko
Publikováno v:
2012 Symposium on VLSI Technology (VLSIT).
Functional circuit elements based on novel BEOL-transistors with a wide-band-gap oxide semiconductor InGaZnO (IGZO) film are integrated onto LSI Cu-interconnects, and their operations are demonstrated. High-current comb-type transistors show excellen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c1cd317ea0c185badd07fdc462b5359
https://doi.org/10.1109/vlsit.2012.6242492
https://doi.org/10.1109/vlsit.2012.6242492