Zobrazeno 1 - 10
of 28
pro vyhledávání: '"N. Fitzer"'
Autor:
S. Zuccaro, Ronald Redmer, N. Fitzer, F.-J. Niedernostheide, Hans-Georg Purwins, Tilmann Kuhn, Th. Raker, A. Kuligk
Publikováno v:
Physica B: Condensed Matter. 314:185-188
We present a combined experimental and theoretical analysis of the high field transport in ZnS:Mn ACTFEL devices. The theory consists in a first principles calculation of the impact ionization (II) coefficient and then this parameter is used in a dri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44cb1903a84cea88b00f1e27e2b65e9e
https://doi.org/10.1016/s0921-4526(01)01379-5
https://doi.org/10.1016/s0921-4526(01)01379-5
Publikováno v:
International Journal of High Speed Electronics and Systems. 11:511-524
Impact ionization plays a crucial role for electron transport in wide-bandgap semiconductors at high electric fields. Therefore, a realistic band structure has to be used in calculations of the microscopic scattering rate, as well as high field quant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6aea79d59e17dcbac703a712ab9a7e20
https://doi.org/10.1142/s0129156401000939
https://doi.org/10.1142/s0129156401000939
Autor:
N. Fitzer, W. Schattke, Stephen M. Goodnick, Ronald Redmer, Justino R. Madureira, Eckehard Schöll
Publikováno v:
Journal of Applied Physics. 87:781-788
Impact ionization plays a crucial role for electron transport in semiconductors at high electric fields. We derive appropriate quantum kinetic equations for electron transport in semiconductors within linear response theory. The field-dependent colli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e5dbb5e550062fdc7be694fb6892b81
https://doi.org/10.1063/1.371941
https://doi.org/10.1063/1.371941
Publikováno v:
Physica B: Condensed Matter. 272:295-298
In the present work, we have theoretically investigated the electronic and transport properties of three wide-band-gap materials, ZnS, SrS, and GaN, using full-band ensemble Monte Carlo (EMC) simulation. We show a suppression of the hole impact ioniz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cf01bf4fc4f1d51a14298a9d6761518
https://doi.org/10.1016/s0921-4526(99)00291-4
https://doi.org/10.1016/s0921-4526(99)00291-4
Publikováno v:
Journal of Applied Physics. 86:4458-4463
Band-to-band impact ionization by hot electrons and holes is an important process in high-field transport in semiconductors, leading to carrier multiplication and avalanche breakdown. Here we perform first principles calculations for the respective m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0743dc24fc3ff7729adf1beb13993e5
https://doi.org/10.1063/1.371386
https://doi.org/10.1063/1.371386
Publikováno v:
Semiconductor Science and Technology. 19:S206-S208
We perform ab initio band structure calculations within density functional theory using an exact exchange formalism and a local density approximation for correlations. Ensemble Monte Carlo simulations consider all relevant scattering mechanisms inclu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8ba687571db02c6d6bb6afd3b626382
https://doi.org/10.1088/0268-1242/19/4/070
https://doi.org/10.1088/0268-1242/19/4/070
Autor:
M. Reigrotzki, W. Schattke, M. Dür, Ronald Redmer, N. Fitzer, Stephen M. Goodnick, J. R. Madureira, A. Kuligk
Publikováno v:
Physica B: Condensed Matter. 314:52-54
Impact ionization is important for electron transport in wide-band-gap semiconductors at high electric fields. We consider a realistic band structure as well as high-field quantum corrections such as the intracollisional field effect in the calculati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ad2ef36449bbb9096341ccd624d6828
https://doi.org/10.1016/s0921-4526(01)01381-3
https://doi.org/10.1016/s0921-4526(01)01381-3
Publikováno v:
Nonequilibrium Carrier Dynamics in Semiconductors ISBN: 9783540365877
Ab initio band structure calculations were performed for GaAs, GaN, and ZnS within density functional theory to determine the impact ionization rate and the high-field electron transport characteristics. The drift velocity, mean kinetic energy, valle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c0670b741698a36762108141541e000
https://doi.org/10.1007/978-3-540-36588-4_30
https://doi.org/10.1007/978-3-540-36588-4_30
Publikováno v:
physica status solidi (b). 204:528-530
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ae0968dcee0b9c46ca80fdc4dc1ca93
https://doi.org/10.1002/1521-3951(199711)204:1<528::aid-pssb528>3.0.co
https://doi.org/10.1002/1521-3951(199711)204:1<528::aid-pssb528>3.0.co
Publikováno v:
Physical Review B. 71
We have performed extensive ab initio band structure calculations within density functional theory using an exact exchange formalism with a local density approximation for correlations. The wave-vector-dependent impact ionization rate is determined f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3e8c9f860bac23176429ac5a8fb4f91
https://doi.org/10.1103/physrevb.71.085201
https://doi.org/10.1103/physrevb.71.085201