Zobrazeno 1 - 10
of 163
pro vyhledávání: '"N. Fitzer"'
Autor:
S. Zuccaro, Ronald Redmer, N. Fitzer, F.-J. Niedernostheide, Hans-Georg Purwins, Tilmann Kuhn, Th. Raker, A. Kuligk
Publikováno v:
Physica B: Condensed Matter. 314:185-188
We present a combined experimental and theoretical analysis of the high field transport in ZnS:Mn ACTFEL devices. The theory consists in a first principles calculation of the impact ionization (II) coefficient and then this parameter is used in a dri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44cb1903a84cea88b00f1e27e2b65e9e
https://doi.org/10.1016/s0921-4526(01)01379-5
https://doi.org/10.1016/s0921-4526(01)01379-5
Publikováno v:
International Journal of High Speed Electronics and Systems. 11:511-524
Impact ionization plays a crucial role for electron transport in wide-bandgap semiconductors at high electric fields. Therefore, a realistic band structure has to be used in calculations of the microscopic scattering rate, as well as high field quant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6aea79d59e17dcbac703a712ab9a7e20
https://doi.org/10.1142/s0129156401000939
https://doi.org/10.1142/s0129156401000939
Autor:
N. Fitzer, W. Schattke, Stephen M. Goodnick, Ronald Redmer, Justino R. Madureira, Eckehard Schöll
Publikováno v:
Journal of Applied Physics. 87:781-788
Impact ionization plays a crucial role for electron transport in semiconductors at high electric fields. We derive appropriate quantum kinetic equations for electron transport in semiconductors within linear response theory. The field-dependent colli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e5dbb5e550062fdc7be694fb6892b81
https://doi.org/10.1063/1.371941
https://doi.org/10.1063/1.371941
Publikováno v:
Physica B: Condensed Matter. 272:295-298
In the present work, we have theoretically investigated the electronic and transport properties of three wide-band-gap materials, ZnS, SrS, and GaN, using full-band ensemble Monte Carlo (EMC) simulation. We show a suppression of the hole impact ioniz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cf01bf4fc4f1d51a14298a9d6761518
https://doi.org/10.1016/s0921-4526(99)00291-4
https://doi.org/10.1016/s0921-4526(99)00291-4
Publikováno v:
Journal of Applied Physics. 86:4458-4463
Band-to-band impact ionization by hot electrons and holes is an important process in high-field transport in semiconductors, leading to carrier multiplication and avalanche breakdown. Here we perform first principles calculations for the respective m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0743dc24fc3ff7729adf1beb13993e5
https://doi.org/10.1063/1.371386
https://doi.org/10.1063/1.371386
Publikováno v:
Semiconductor Science and Technology. 19:S206-S208
We perform ab initio band structure calculations within density functional theory using an exact exchange formalism and a local density approximation for correlations. Ensemble Monte Carlo simulations consider all relevant scattering mechanisms inclu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8ba687571db02c6d6bb6afd3b626382
https://doi.org/10.1088/0268-1242/19/4/070
https://doi.org/10.1088/0268-1242/19/4/070
Autor:
M. Reigrotzki, W. Schattke, M. Dür, Ronald Redmer, N. Fitzer, Stephen M. Goodnick, J. R. Madureira, A. Kuligk
Publikováno v:
Physica B: Condensed Matter. 314:52-54
Impact ionization is important for electron transport in wide-band-gap semiconductors at high electric fields. We consider a realistic band structure as well as high-field quantum corrections such as the intracollisional field effect in the calculati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ad2ef36449bbb9096341ccd624d6828
https://doi.org/10.1016/s0921-4526(01)01381-3
https://doi.org/10.1016/s0921-4526(01)01381-3
Autor:
Ahmadi, Najia1 (AUTHOR) najia.ahmadi@tu-dresden.de, Zoch, Michele1 (AUTHOR), Guengoeze, Oya2 (AUTHOR), Facchinello, Carlo2 (AUTHOR), Mondorf, Antonia2 (AUTHOR), Stratmann, Katharina2 (AUTHOR), Musleh, Khader2 (AUTHOR), Erasmus, Hans-Peter2 (AUTHOR), Tchertov, Jana1 (AUTHOR), Gebler, Richard1 (AUTHOR), Schaaf, Jannik3 (AUTHOR), Frischen, Lena S.4 (AUTHOR), Nasirian, Azadeh5 (AUTHOR), Dai, Jiabin1 (AUTHOR), Henke, Elisa1 (AUTHOR), Tremblay, Douglas6 (AUTHOR), Srisuwananukorn, Andrew7 (AUTHOR), Bornhäuser, Martin8 (AUTHOR), Röllig, Christoph8 (AUTHOR), Eckardt, Jan-Niklas8,9 (AUTHOR)
Publikováno v:
Orphanet Journal of Rare Diseases. 8/14/2024, Vol. 19 Issue 1, p1-17. 17p.
Publikováno v:
Nonequilibrium Carrier Dynamics in Semiconductors ISBN: 9783540365877
Ab initio band structure calculations were performed for GaAs, GaN, and ZnS within density functional theory to determine the impact ionization rate and the high-field electron transport characteristics. The drift velocity, mean kinetic energy, valle
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c0670b741698a36762108141541e000
https://doi.org/10.1007/978-3-540-36588-4_30
https://doi.org/10.1007/978-3-540-36588-4_30
Publikováno v:
physica status solidi (b). 204:528-530
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ae0968dcee0b9c46ca80fdc4dc1ca93
https://doi.org/10.1002/1521-3951(199711)204:1<528::aid-pssb528>3.0.co
https://doi.org/10.1002/1521-3951(199711)204:1<528::aid-pssb528>3.0.co