Zobrazeno 1 - 10
of 64
pro vyhledávání: '"N. Fel"'
Publikováno v:
Journal of High Energy Physics, Vol 2024, Iss 6, Pp 1-21 (2024)
Abstract We propose an approach for measuring the moments of the hadronic invariant mass distribution in semileptonic B s 0 $$ {B}_s^0 $$ meson decays using a sum-of-exclusive technique. Using the present and foreseen knowledge about exclusive semile
Externí odkaz:
https://doaj.org/article/2c9e13001c36498f839aa2246255e733
Autor:
L. Claes, N. Feldmann, V. Schulze, L. Meihost, H. Kuhlmann, B. Jurgelucks, A. Walther, B. Henning
Publikováno v:
Journal of Sensors and Sensor Systems, Vol 12, Pp 163-173 (2023)
An inverse measurement procedure for the determination of a full set of piezoelectric material parameters using a single sample is presented. The basis for the measurement procedure is a measurement of the frequency-dependent impedance of the sample.
Externí odkaz:
https://doaj.org/article/8fe7d58069934d029f4ef1403634215c
Autor:
V. Patil, J. F. Hernandez-Franco, G. Yadagiri, D. Bugybayeva, S. Dolatyabi, N. Feliciano-Ruiz, J. Schrock, J. Hanson, J. Ngunjiri, H. HogenEsch, G. J. Renukaradhya
Publikováno v:
Journal of Nanobiotechnology, Vol 20, Iss 1, Pp 1-20 (2022)
Abstract Background Swine influenza A viruses (SwIAVs) pose an economic and pandemic threat, and development of novel effective vaccines is of critical significance. We evaluated the performance of split swine influenza A virus (SwIAV) H1N2 antigens
Externí odkaz:
https://doaj.org/article/1d01f9d89b87466db9f3326b5b2d49e6
Autor:
M. Gaillardin, Marty R. Shaneyfelt, F. Essely, V.F. Cavrois, Vincent Pouget, Joseph S. Melinger, Dale McMorrow, N. Fel, P. Paillet, Daisuke Kobayashi, J.R. Schwank, Richard S. Flores, Olivier Duhamel, Paul E. Dodd
Publikováno v:
IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, 2008, 55 (6), pp.2842-2853
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2008, 55 (6), pp.2842-2853
IEEE Transactions on Nuclear Science, 2008, 55 (6), pp.2842-2853
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2008, 55 (6), pp.2842-2853
The propagation of single event transients (SET) is measured and modeled in SOI and bulk inverter chains. The propagation-induced pulse broadening (PIPB) effect is shown to determine the SET pulse width measured at the output of long chains of invert
Autor:
Sylvain Girard, J. Baggio, V. Ferlet-Cavrois, J.A. Felix, N. Fel, P. Paillet, Paul E. Dodd, Olivier Duhamel, Dale McMorrow, J.R. Schwank, Joseph S. Melinger, Marc Gaillardin, Marty R. Shaneyfelt
Publikováno v:
IEEE Transactions on Nuclear Science. 54:2338-2346
The generation and propagation of single event transients (SET) is measured and modeled in SOI inverter chains with different designs. SET propagation in inverter chains induces significant modifications of the transient width. In some cases, a "prop
Autor:
J.L. Gautier, V. Ferlet-Cavrois, J. du Port de Poncharra, N. Fel, J.L. Pelloie, A. Bracale, Daniel Pasquet
Publikováno v:
Analog Integrated Circuits and Signal Processing. 25:157-169
SOI devices are frequently used nowadays in the RF and HF field. Design of complex SOI integrated circuits involves a prior detailed analog simulation, that can only be performed through accurate SOI active components models. We are interested here i
Autor:
L. Picheta, N. Fel, J. Russat, Jean-Pierre Raskin, M. Si Moussa, D. Vanhoenaker-Janvier, C. Pavageau, Francois Danneville
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques
IEEE Transactions on Microwave Theory and Techniques, Institute of Electrical and Electronics Engineers, 2008, 56, pp.587-598. ⟨10.1109/TMTT.2008.916930⟩
IEEE Transactions on Microwave Theory and Techniques, 2008, 56, pp.587-598. ⟨10.1109/TMTT.2008.916930⟩
IEEE Transactions on Microwave Theory and Techniques, Institute of Electrical and Electronics Engineers, 2008, 56, pp.587-598. ⟨10.1109/TMTT.2008.916930⟩
IEEE Transactions on Microwave Theory and Techniques, 2008, 56, pp.587-598. ⟨10.1109/TMTT.2008.916930⟩
This paper presents designs and measurements of distributed amplifiers (DAs) processed on a 130-nm silicon-on-insulator CMOS technology on either standard-resistivity (10 Omegamiddotcm) or high-resistivity (>1 kOmegamiddotcm) substrates, and with eit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c63ce6b938f724c4ec69adcc41d83d4d
https://hal.archives-ouvertes.fr/hal-00356663
https://hal.archives-ouvertes.fr/hal-00356663
Autor:
L. Picheta, J. Russat, Dimitri Lederer, N. Fel, C. Pavageau, Jean-Pierre Raskin, Danielle Vanhoenacker-Janvier, M. Si Moussa, Francois Danneville
Publikováno v:
2005 IEEE International SOI Conference Proceedings.
Losses of microstrip line and coplanar waveguide made on HR and STD SOI wafers were analyzed with respect to temperature. MSL allows the use of STD substrate because the back ground plane shields the Si substrate. MSL can then be an interesting topol
Autor:
L. Picheta, J. Russat, Danielle Vanhoenacker-Janvier, Francois Danneville, M. Si Moussa, J-P Raskin, N. Fel, C. Pavageau
Publikováno v:
Proceedings of the 2006 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
2006, 4 pp
2006, 4 pp
In this paper, the design and the results of two CMOS silicon-on-insulator (SOI) distributed amplifiers (DA) are presented. Partially-depleted SOI process using microstrip lines, and floating-body (FB) transistors are considered. The measured gain is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::62fbba1ac1e535a181ba82ecf935a878
https://hal.archives-ouvertes.fr/hal-00128229
https://hal.archives-ouvertes.fr/hal-00128229
Autor:
Danielle Vanhoenacker-Janvier, N. Fel, M. Si Moussa, L. Picheta, Dimitri Lederer, Francois Danneville, J. Russat, Jean-Pierre Raskin, C. Pavageau
Publikováno v:
Solid-State Electronics
Solid-State Electronics, 2006, 50, pp.1822-1827
Solid-State Electronics, Elsevier, 2006, 50, pp.1822-1827
Solid-State Electronics, 2006, 50, pp.1822-1827
Solid-State Electronics, Elsevier, 2006, 50, pp.1822-1827
Practical application of integrated circuits requires operation over a wide temperature range. In the case of microwave monolithic integrated circuits (MMICs), the quality of the interconnections as well as the passive matching networks in term of lo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c2e4af1746896dfc4d79d4d652dd4acc
https://hal.science/hal-00147509
https://hal.science/hal-00147509