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pro vyhledávání: '"N. Faramarzpour"'
Akademický článek
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Publikováno v:
IEEE Sensors Journal. 13:1554-1563
The silicon-based gate-controlled lateral bipolar junction transistor (BJT) is a controllable four-terminal photodetector with very high responsivity at low-light intensities. It is a hybrid device composed of a MOSFET, a lateral BJT, and a vertical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d790e2aa988025def48777aec477e8a
https://doi.org/10.1109/jsen.2012.2235827
https://doi.org/10.1109/jsen.2012.2235827
Autor:
Qiyin Fang, Shahram Shirani, N. Faramarzpour, M.J. Deen, Munir M. El-Desouki, Louis W. C. Liu
Publikováno v:
IEEE Potentials. 27:31-36
CMOS photodetectors and imaging systems have shown that they possess adequate performance characteristics to replace CCDs or PMTs in some biomedical applications, thereby providing low power, portable, and cheap integrated bioimaging systems. Some ad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82d6887e8c3f5e789f784c305a241aa0
https://doi.org/10.1109/mpot.2008.916105
https://doi.org/10.1109/mpot.2008.916105
Publikováno v:
ResearcherID
Avalanche photodiodes (APDs) operating in Geiger mode can detect weak optical signals at high speed. The implementation of APD systems in a CMOS technology makes it possible to integrate the photodetector and its peripheral circuits on the same chip.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef0853f42f710bc6268fe9ef5b52d12a
https://doi.org/10.1109/ted.2007.914839
https://doi.org/10.1109/ted.2007.914839
Autor:
N. Faramarzpour, L.W.-C. Liu, Shahram Shirani, M. Kfouri, P. Quevedo, Qiyin Fang, Ognian Marinov, M.J. Deen
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 14:226-234
Fluorescence-based spectroscopy and imaging techniques provide qualitative and quantitative diagnostic information on biological systems. In this paper, we report on the design, fabrication, and testing of a miniaturized wireless fluorescence imaging
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58b4d080a30e3afac39a080f81a1e12f
https://doi.org/10.1109/jstqe.2007.911765
https://doi.org/10.1109/jstqe.2007.911765
Publikováno v:
Journal of Materials Science: Materials in Electronics. 20:87-93
In this work, we have designed, fabricated and measured the performance of three different active pixel sensor (APS) structures. These APS structures are studied in the context of applications that require low-level light detection systems. The three
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28958f394dc583edf766a3eb8e1a02f2
https://doi.org/10.1007/s10854-007-9455-6
https://doi.org/10.1007/s10854-007-9455-6
Autor:
M.J. Deen, Qiyin Fang, Jacobus W. Swart, Louis W. C. Liu, Shahram Shirani, F. de Campos, N. Faramarzpour
Publikováno v:
IEEE Transactions on Electron Devices. 54:3229-3237
An analysis of the active pixel sensor (APS), considering the doping profiles of the photodiode in an APS fabricated in a 0.18 mum standard CMOS technology, is presented. A simple and accurate model for the junction capacitance of the photodiode is p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c63c7d057c0187c802ce855083a5d698
https://doi.org/10.1109/ted.2007.908594
https://doi.org/10.1109/ted.2007.908594
Publikováno v:
IEEE Transactions on Electron Devices. 53:2384-2391
CMOS photodetectors are compact, cheap, and of low power, making them good candidates for many biomedical applications. However, many of these applications require the capability of detecting low-level light. Therefore, the noise in CMOS sensors must
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e3c56b1d684c6a2294d80b92ccca756
https://doi.org/10.1109/ted.2006.881053
https://doi.org/10.1109/ted.2006.881053
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:879-882
The active pixel sensor (APS) structure is the most common pixel element for photodetection systems in standard complementary metal-oxide semiconductor technology. The focus of our work is on finding functional characteristics for low-light level des
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e711e508eb2f3f996b862c3fa921fdec
https://doi.org/10.1116/1.2167977
https://doi.org/10.1116/1.2167977
Akademický článek
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