Zobrazeno 1 - 10
of 17
pro vyhledávání: '"N. F. Zikrillaev"'
Publikováno v:
Surface Engineering and Applied Electrochemistry. 59:210-215
Publikováno v:
Elektronnaya Obrabotka Materialov. :16-20
A possibility of the formation of structures such as compounds of elements between chalcogenides and the transition group of metals in the crystal lattice of silicon is studied. This is an urgent problem in electronics. It is shown that, under certai
Publikováno v:
Technical Physics Letters. 47:641-644
Publikováno v:
Semiconductors. 55:542-545
Publikováno v:
Semiconductors. 56:29-31
Influence of electrically neutral nickel atoms on electrical and recombination parameters of silicon
Publikováno v:
Semiconductor Physics, Quantum Electronics and Optoelectronics. 23:361-365
The results of this study show that creation of clusters from impurity nickel atoms almost completely suppresses generation of thermal donors within the temperature range 450 to 1200 °C. The composition of these clusters was determined using the tec
Autor:
G. Kh. Mavlonov, S. V. Koveshnikov, M. K. Bakhadirkhanov, N. F. Zikrillaev, Sh. N. Ibodullaev, Kh. M. Iliev, S. B. Isamov
Publikováno v:
Surface Engineering and Applied Electrochemistry. 56:734-739
The paper reports that silicon with nanoclusters of manganese atoms has unique electrical, photoelectric, magnetic, and photomagnetic properties that are absent in ordinary doped semiconductor materials. The samples revealed an anomalously high impur
Autor:
E. B. Saitov, N. F. Zikrillaev, S. A. Tachilin, S. V. Koveshnikov, M. K. Bakhadyrkhanov, S. A. Valiev
Publikováno v:
Applied Solar Energy. 52:278-281
This article considers the technology of fabricating clusters of nickel atoms in a silicon crystalline lattice with controlled parameters. Silicon solar cells with clusters of nickel atoms have been fabricated and their parameters determined. It has
Autor:
Y. H. Kwon, M. K. Bakhadyrkhanov, T. W. Kang, Kh. T. Igamberdiev, Ziyodbek A. Yunusov, N. F. Zikrillaev, Sh. U. Yuldashev, S. B. Isamov
Publikováno v:
Journal of the Korean Physical Society. 64:1461-1465
In this work, the ferromagnetic states of Mn-doped p-type silicon samples were investigated. Two different types of ferromagnetic states have been observed in Si (Mn, B). The samples with a relatively high concentration of Mn revealed a ferromagnetic
Publikováno v:
Inorganic Materials. 50:325-329
Using current-voltage measurements at varied temperature, incident light intensity, and illumination wavelength, we have determined the energy level spectrum of a multiply charged cluster of manganese atoms in silicon. The results demonstrate that su