Zobrazeno 1 - 1
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pro vyhledávání: '"N. F. Ruggieri"'
Publikováno v:
IEEE Photonics Technology Letters. 2:531-533
Dark-line defect formation is compared in GaAs/AlGaAs and strained InGaAs/AlGaAs quantum well lasers. Dark-line defects have high growth velocity along
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8a1b8453974d5231058583712211702
https://doi.org/10.1109/68.58039
https://doi.org/10.1109/68.58039
