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pro vyhledávání: '"N. F. Karushkin"'
Autor:
N. F. Karushkin
Publikováno v:
Радиофизика и электроника, Vol 23, Iss 3, Pp 40-64 (2018)
Subject and purpose. One of the main problems arising in the implementation of the terahertz range is associated with the need to provide the advanced equipment developed in this frequency band with effective electronic components. Methods and metho
Externí odkaz:
https://doaj.org/article/e27164c65f454cc68739c47b4dc784f8
Publikováno v:
Russian Microelectronics. 50:161-169
It is proposed to use transistor-transistor logic (TTL) for future fast, low-power digital electronic circuits. A relaxation quantum transistor can be the basic element of these circuits. This approach allows us to circumvent the difficulties of usin
Publikováno v:
Nano- i Mikrosistemnaya Tehnika. 21:165-177
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4-5, Pp 34-41 (2016)
The paper presents the results of research and development of concentrated type p—i—n-diodes switches providing the switching time at the level of a few nanoseconds. To increase lock losses of (~40 dB) the authors use a cascade connection of diod
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 1, Pp 8-11 (2016)
The paper presents scientific, technological and production potential of Research Institute «Orion» in the field of creation of wide range of high performance active and passive solid-state microwave devices, modules and components as well as multi
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 4, Pp 3-7 (2015)
Transmitting devices for small radars in the millimeter wavelength range with high resolution on range and noise immunity. The work presents the results of research and development of compact pulse oscillators with digital frequency switching from pu
Publikováno v:
Telecommunications and Radio Engineering. 73:1209-1218
Publikováno v:
Telecommunications and Radio Engineering. 73:719-733
Autor:
N. F. Karushkin, N. M. Goncharuk
Publikováno v:
2016 29th International Vacuum Nanoelectronics Conference (IVNC).
A theoretical model of a microwave diode structure was applied to the base of a silicon cathode with a diamond like coating (DLC) and non-resonant electron emission to study negative conductance of the structure in the framework of the small signal t
Autor:
N. F. Karushkin
Publikováno v:
Telecommunications and Radio Engineering. 63:1117-1130