Zobrazeno 1 - 10
of 25
pro vyhledávání: '"N. F. Hinsche"'
Autor:
Per Simmendefeldt Schmidt, Morten Niklas Gjerding, Thomas Olsen, Daniele Torelli, Jakob Gath, Mohnish Pandey, Peter Mahler Larsen, Mikkel Strange, Anders C. Riis-Jensen, Thorsten Deilmann, N. F. Hinsche, Karsten Wedel Jacobsen, Sten Haastrup, Jens Jørgen Mortensen, Kristian Sommer Thygesen
Publikováno v:
Haastrup, S, Strange, M, Pandey, M, Deilmann, T, Schmidt, P S, Hinsche, N F, Gjerding, M N, Torelli, D, Larsen, P M, Riis-Jensen, A C, Gath, J, Jacobsen, K W, Mortensen, J J, Olsen, T & Thygesen, K S 2019, ' Reply to comment on 'The Computational 2D Materials Database: high-throughput modeling and discovery of atomically thin crystals' ', 2D materials, vol. 6, no. 4, 048002 . https://doi.org/10.1088/2053-1583/ab2f00
In his comment Maździarz 2019 (2D Mater. 6 048001) raises doubts concerning the reliability of our test for dynamical (in particular elastic) stability of monolayer materials, which neglects the shear components of the stiffness tensor and only cons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4603bf873e4268ff3f57364e6c48e7a2
https://orbit.dtu.dk/en/publications/94179e5b-5b0a-4df3-a086-870bf75861b5
https://orbit.dtu.dk/en/publications/94179e5b-5b0a-4df3-a086-870bf75861b5
Autor:
N. F. Hinsche, Wolfgang Bensch, Ulrich Schürmann, David W. Johnson, Torben Dankwort, Peter Zahn, Markus Winkler, Jan D. Koenig, Lorenz Kienle, Ingrid Mertig, Anna-Lena Hansen
Publikováno v:
physica status solidi (a). 213:662-671
The scope of this work is to review the thermoelectric properties, the microstructures, and their correlation with theoretical calculations and predictions for recent chalcogenide based materials. The main focus is put on thin multilayered Bi2Te3, Sb
Autor:
N. F. Hinsche, Knud Zabrocki, Henni Ouerdane, Christophe Goupil, Eckhard Müller, Wolfgang Seifert
Publikováno v:
Continuum Theory andModeling of Thermoelectric Elements
Thermoelectric (TE) effects result from the interference of electrical current and heat flow in various materials. This chapter presents a retrospective view on some of the milestones in the development of thermoelectricity. It reviews the thermodyna
Publikováno v:
physica status solidi (a). 213:672-683
authoren The scope of this review is to present the recent progress in the understanding of the microscopic origin of thermoelectric transport in semiconducting heterostructures and to identify and elucidate mechanisms which could lead to enhanced th
Autor:
Laurens Pudewill, Ingrid Mertig, Robert Zierold, Jürgen Henk, N. F. Hinsche, Kornelius Nielsch, Johannes Gooth, Sebastian Zastrow, Tomáš Rauch, Florian Rittweger
Publikováno v:
ACS Nano. 9:4406-4411
Ab initio electronic structure calculations based on density functional theory and tight-binding methods for the thermoelectric properties of p-type Sb$_2$Te$_3$ films are presented. The thickness-dependent electrical conductivity and the ther- mopow
Publikováno v:
Hinsche, N F & Thygesen, K S 2018, ' Electron–phonon interaction and transport properties of metallic bulk and monolayer transition metal dichalcogenide TaS 2 ', 2D materials, vol. 5, no. 1, 015009 . https://doi.org/10.1088/2053-1583/aa8e6c
Transition metal dichalcogenides have recently emerged as promising two-dimensional materials with intriguing electronic properties. Existing calculations of intrinsic phonon-limited electronic transport so far have concentrated on the semicondcuctin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::530643a8b336d18acffd4bf22c1337c6
http://arxiv.org/abs/1709.06842
http://arxiv.org/abs/1709.06842
Publikováno v:
Rittweger, F, Hinsche, N F & Mertig, I 2017, ' Phonon limited electronic transport in Pb ', Journal of Physics Condensed Matter, vol. 29, no. 35, 355501 . https://doi.org/10.1088/1361-648X/aa7b56
We present a fully ab initio based scheme to compute electronic transport properties, i.e. the electrical conductivity σ and thermopower S, in the presence of electron-phonon interaction. We explicitly investigate the k-dependent structure of the É
Autor:
Harsh Bana, Kevin Guilloy, Alessandro Baraldi, N. F. Hinsche, Maciej Dendzik, Luca Bignardi, Silvano Lizzit, Philip Hofmann, Rosanna Larciprete, Paolo Lacovig, Arlette S. Ngankeu, Marco Bianchi, Antonija Grubišić Čabo, Jill A. Miwa, Elisabetta Travaglia, Kristian Sommer Thygesen, Sanjoy K. Mahatha, Charlotte E. Sanders
Publikováno v:
Hinsche, N F, Ngankeu, A S, Guilloy, K, Mahatha, S K, Grubišic Cabo, A, Bianchi, M, Dendzik, M, Sanders, C E, Miwa, J A, Bana, H, Travaglia, E, Lacovig, P, Bignardi, L, Larciprete, R, Baraldi, A, Lizzit, S, Thygesen, K S & Hofmann, P 2017, ' Spin-dependent electron-phonon coupling in the valence band of single-layer WS 2 ', Physical Review B, vol. 96, no. 12, 121402 . https://doi.org/10.1103/PhysRevB.96.121402
Hinsche, N F, Ngankeu, A S, Guilloy, K, Mahatha, S K, Cabo, A G, Bianchi, M, Dendzik, M, Sanders, C E, Miwa, J A, Bana, H, Travaglia, E, Lacovig, P, Bignardi, L, Larciprete, R, Baraldi, A, Lizzit, S, Thygesen, K S & Hofmann, P 2017, ' Spin-dependent electron-phonon coupling in the valence band of single-layer WS2 ', Physical Review B, vol. 96, no. 12, 121402 . https://doi.org/10.1103/PhysRevB.96.121402
Physical Review B 96 (2017): 121402-1–121402-5. doi:10.1103/PhysRevB.96.121402
info:cnr-pdr/source/autori:Hinsche, Nicki Frank; Ngankeu, Arlette S.; Guilloy, Kevin; Mahatha, Sanjoy K.; Cabo, Antonija Grubisic; Bianchi, Marco; Dendzik, Maciej; Sanders, Charlotte E.; Miwa, Jill A.; Bana, Harsh; Travaglia, Elisabetta; Lacovig, Paolo; Bignardi, Luca; Larciprete, Rosanna; Baraldi, Alessandro; Lizzit, Silvano; Thygesen, Kristian Sommer; Hofmann, Philip/titolo:Spin-dependent electron-phonon coupling in the valence band of single-layer WS2/doi:10.1103%2FPhysRevB.96.121402/rivista:Physical Review B/anno:2017/pagina_da:121402-1/pagina_a:121402-5/intervallo_pagine:121402-1–121402-5/volume:96
Hinsche, N F, Ngankeu, A S, Guilloy, K, Mahatha, S K, Cabo, A G, Bianchi, M, Dendzik, M, Sanders, C E, Miwa, J A, Bana, H, Travaglia, E, Lacovig, P, Bignardi, L, Larciprete, R, Baraldi, A, Lizzit, S, Thygesen, K S & Hofmann, P 2017, ' Spin-dependent electron-phonon coupling in the valence band of single-layer WS2 ', Physical Review B, vol. 96, no. 12, 121402 . https://doi.org/10.1103/PhysRevB.96.121402
Physical Review B 96 (2017): 121402-1–121402-5. doi:10.1103/PhysRevB.96.121402
info:cnr-pdr/source/autori:Hinsche, Nicki Frank; Ngankeu, Arlette S.; Guilloy, Kevin; Mahatha, Sanjoy K.; Cabo, Antonija Grubisic; Bianchi, Marco; Dendzik, Maciej; Sanders, Charlotte E.; Miwa, Jill A.; Bana, Harsh; Travaglia, Elisabetta; Lacovig, Paolo; Bignardi, Luca; Larciprete, Rosanna; Baraldi, Alessandro; Lizzit, Silvano; Thygesen, Kristian Sommer; Hofmann, Philip/titolo:Spin-dependent electron-phonon coupling in the valence band of single-layer WS2/doi:10.1103%2FPhysRevB.96.121402/rivista:Physical Review B/anno:2017/pagina_da:121402-1/pagina_a:121402-5/intervallo_pagine:121402-1–121402-5/volume:96
The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single-layer transition-metal dichalchogenides such as ${\mathrm{MoS}}_{2}$ or ${\mathrm{WS}}_{2}$. This permits a direct comparison
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e0c573390c4a0ab7397ae052a1f89d5b
https://orbit.dtu.dk/en/publications/f823c21d-4a2c-4558-9d4b-f70b26907927
https://orbit.dtu.dk/en/publications/f823c21d-4a2c-4558-9d4b-f70b26907927
Autor:
J. de Boor, D. S. Kim, X. Ao, Michael Becker, Ingrid Mertig, Volker Schmidt, Peter Zahn, N. F. Hinsche
Publikováno v:
Applied Physics A. 107:789-794
We have studied the thermoelectric properties of porous silicon, a nanostructured, yet single-crystalline form of silicon. Using electrochemical etching, liquid-phase doping, and high-temperature passivation, we show that porous Si can be fabricated
Publikováno v:
Thermoelectric Bi2Te3 Nanomaterials
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5378183bb5f8b812c2685132d428057d
https://doi.org/10.1002/9783527672608.ch10
https://doi.org/10.1002/9783527672608.ch10