Zobrazeno 1 - 10
of 10
pro vyhledávání: '"N. E. Metcalfe"'
Autor:
N. E. Metcalfe, R. S. Hall, A. M. White, C. D. Maxey, Neil Gordon, C. L. Jones, R. A. Catchpole
Publikováno v:
Journal of Electronic Materials. 29:818-822
Results are reported on infrared photodiodes which have been designed to minimize the dark diffusion currents for operating temperatures above 200 K in the MWIR (3–5 µm) waveband. It is shown that by adjusting the doping and composition profiles,
Publikováno v:
Journal of Modern Optics. 45:1601-1611
The design, construction and assessment of a CO 2 laser heterodyne receiver based on a Hg 1-x Cd x Te heterostructure is described. The structure has been designed to minimize the leakage currents at high temperatures while maintaining a high quantum
Publikováno v:
Journal of Modern Optics. 45:1601-1611
Autor:
N. E. Metcalfe, R. A. Catchpole, R. S. Hall, C. D. Maxey, T. Colin, A. Best, Neil Gordon, C. L. Jones, Torbjørn Skauli
Publikováno v:
Scopus-Elsevier
Auger suppression reduces the leakage current in uncooled CdHgTe diodes to the point where the shot noise limited D* is significantly higher than for other uncooled detectors. However, Auger-suppressed diodes exhibit high levels of 1/f noise and so a
Autor:
A. M. White, M. R. Houlton, C.T. Elliott, R. A. Catchpole, N. E. Metcalfe, C. D. Maxey, Neil Gordon, C. L. Jones
Publikováno v:
Scopus-Elsevier
Band gap engineered Hg1−xCdxTe (MCT) heterostructures should lead to detectors with improved electro-optic and radiometric performance at elevated operating temperatures. Growth of such structures was accomplished using metalorganic vapor phase epi
Autor:
Neil Gordon, A. M. White, C. D. Maxey, H. Steen, T. J. Phillips, D. J. Wilson, N. E. Metcalfe, C. L. Jones, C.T. Elliott
Publikováno v:
Journal of Electronic Materials. 25:1146-1150
By taking advantage of Auger suppression techniques, the leakage currents of room temperature infrared detectors operating in the LWIR band can be greatly reduced. At present, these detectors suffer from large 1/f noise and hence the improvement in t
Autor:
T. J. Phillips, R. S. Hall, N. E. Metcalfe, Charles Thomas Elliott, C. L. Jones, Neil Gordon, C. D. Maxey, A. M. White
Publikováno v:
Scopus-Elsevier
The ability to grow complex multilayer structures in Hg1-xCdxTe by epitaxial techniques has made it possible to produce a range of new devices such as infrared LEDs, lasers, and two-color infrared detector arrays. The devices described here, however,
Publikováno v:
Semiconductor Science and Technology. 6:C110-C113
Optical concentration is a means of improving the performance of CdHgTe photodiodes so that they can be used at longer wavelengths and higher temperatures. The authors describe the fabrication of silicon microlens arrays the fabrication of 128*1 arra
Autor:
A. M. White, N. E. Metcalfe, C. L. Jones, C. D. Maxey, R. A. Catchpole, Charles Thomas Elliot, Neil Gordon
Publikováno v:
SPIE Proceedings.
Cadmium mercury telluride (Hg1-xCdxTe or MCT) non- equilibrium detector structures which allow room temperature operation have been grown by metal-organic vapor phase epitaxy (MOVPE). These devices suppress the auger generation by reducing the intrin
Autor:
N. E. Metcalfe, C. D. Maxey, B. E. Matthews, Charles Thomas Elliott, R. S. Hall, Neil Gordon, C. L. Jones, T. J. Phillips
Publikováno v:
SPIE Proceedings.
Recent advances in the growth of cadmium mercury telluride (Hg1-xCdxTe or MCT) by metal organic vapor phase epitaxy (MOVPE) allow the fabrication of advanced device structures where both the alloy composition x and the doping concentration can be acc