Zobrazeno 1 - 10
of 12
pro vyhledávání: '"N. E. Maslova"'
Autor:
Ye. T. Taurbayev, K. K. Dihanbayev, V. E. Nikulin, E. A. Svanbayev, T. I. Taurbayev, Yu. Timoshenko, N. E. Maslova, K. A. Gonchar
Publikováno v:
Вестник. Серия физическая, Vol 31, Iss 4, Pp 67-72 (2009)
Nanocrystalline silicon films, which exhibit efficient photoluminescence, were formed from amorphous films of hydrogenated silicon subjected to rapid thermal annealing and stain etching in hydrofluoric acid based solutions. The samples were investiga
Externí odkaz:
https://doaj.org/article/b3fe9da069a645e2a1f2af934e35627c
Autor:
Yulia Grishchenko, Dmitry Mamichev, Yulia Khrapovitskaya, N. E. Maslova, M. L. Zanaveskin, Ivan S. Sokolov
Publikováno v:
physica status solidi c. 12:202-205
The effect of contact material on cyclic degradation stability of titanium oxide based memristor has been investigated. The memristors were made by pulsed laser deposition which has several advantages in comparison with other methods of memristor fab
Autor:
Yulia Khrapovitskaya, Ivan S. Sokolov, N. E. Maslova, Yulia Grishchenko, M. L. Zanaveskin, Dmitry Mamichev
Publikováno v:
physica status solidi c. 12:242-245
The structural and electrophysical properties of titanium oxide based memristor obtained by pulsed laser deposition were analysed. The experimental results found the possibility of fine tuning of memristor active layers stoichiometry during depositio
Autor:
N. E. Maslova, Yu. V. Khrapovitskaya, Vyacheslav A. Demin, M. L. Zanaveskin, Yu. V. Grishchenko
Publikováno v:
Technical Physics Letters. 40:317-319
The stability of titanium oxide memristors with gold and platinum electrodes with respect to switching-induced degradation has been studied. It is established that the use of gold instead of platinum as the electrode material significantly increases
Autor:
Denis M. Zhigunov, V. Yu. Timoshenko, A. A. Antonovsky, V. N. Seminogov, V. N. Glebov, N. E. Maslova
Publikováno v:
Semiconductors. 44:1040-1043
Raman spectroscopy is used for the study of SiO x (x ≈ 1) layers subjected to thermal annealing at the temperatures from 950 to 1200°C to form Si nanocrystals inside the layers. From comparison of the experimental data with the model of spatial co
Autor:
Victor Yu. Timoshenko, Yerzhan T. Taurbayev, Kyrill A. Gonchar, Tokhtar I. Taurbayev, N. E. Maslova
Publikováno v:
International Journal of Nanoscience. :139-143
Wafers of crystalline silicon (c-Si) and compound semiconductors (GaP, GaAs) were nanostructured by using the electrochemical etching in specially designed cells with two or more electrodes spaced at 100–500 μm distances, which allowed keeping the
Autor:
Sergey A. Dyakov, V. Ya. Panchenko, N. E. Maslova, Denis M. Zhigunov, O. A. Shalygina, V. Yu. Timoshenko, V. N. Glebov, Pavel K. Kashkarov, A. M. Malyutin, Vladimir N. Seminogov, A. S. Akhmanov, Victor I. Sokolov
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 41:1006-1009
The structure and optical properties of thermally annealed silicon-rich silicon oxide (SRSO) films are investigated by means of transmission electron microscopy (TEM), photoluminescence (PL), infrared (IR) and Raman spectroscopy. The samples were pre
Autor:
I. O. Ostapenko, Pavel K. Kashkarov, I. O. Djun, S. V. Zabotnov, N. E. Maslova, Vladimir I. Panov, Alexander A. Ezhov, A. E. Dokukina, V. U. Timoshenko, Leonid A. Golovan
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 73:39-41
It is shown by atomic force microscopy that nanoparticles formed upon ablation of surface of single-crystal and porous silicon by femtosecond laser pulses have a lateral size from several tens to 200 nm and a height from 2 to 30 nm. Dependences of th
Publikováno v:
Science and Education of the Bauman MSTU. 13
Publikováno v:
Science and Education of the Bauman MSTU. 12