Zobrazeno 1 - 10
of 15
pro vyhledávání: '"N. E. Hecker"'
Publikováno v:
The European Physical Journal B. 5:143-152
We present a systematic study of the dependence of the energy relaxation of photo-excited minority electrons on the doping concentration in highly p-doped GaAs. A nonmonotonic dependence is found in the region where the characteristics of the carrier
Publikováno v:
physica status solidi (b). 204:102-105
Publikováno v:
Physical Review B. 55:R7311-R7314
Publikováno v:
Physical Review B. 55:R700-R703
We have measured the ion-channeling minimum yield ({chi}{sub min}) and angular width ({Psi}{sub 1/2}) for Y, Ba, Cu, and O in 2000 {Angstrom} (001)-oriented films of YBa{sub 2}Cu{sub 3}O{sub 7{minus}{delta}} on MgO. The measurements mapped out a 30 K
Autor:
T.E. Mason, N. E. Hecker, T. Armstrong, D. Lee, Herbert A. Mook, J.A. Harvey, Kamel Salama, Pengcheng Dai, G. Aeppli
Publikováno v:
Physica B: Condensed Matter. :43-47
Triple-axis spectrometry has been used to determine the magnetic excitations in YBa{sub 2}Cu{sub 3}O{sub 7}. Polarized measurements at 100 K show the scattering consists of a peak near 40 meV superposed on a small relatively flat background. The 40-m
Autor:
M. C. Moxon, Jene Andrew Golovchenko, N. W. Hill, Herbert A. Mook, J. A. Harvey, N. E. Hecker
Publikováno v:
Physical Review B. 50:16129-16132
Autor:
Klaus Lips, I. H. Libon, M. Schall, P. Uhd Jepsen, N. E. Hecker, Uli Lemmer, Mario Birkholz, W. Schairer
Publikováno v:
Technical University of Denmark Orbit
We report on direct evidence of ultrafast carrier dynamics displaying features on the picosecond time scale in microcrystalline silicon (μc-Si:H). The dynamics of photogenerated carriers is studied by using above-band-gap optical excitation and prob
Autor:
Martin Koch, Imke. H. Libon, M. Hempel, S. Baumgärtner, Philip Dawson, Jochen Feldmann, N. E. Hecker
Publikováno v:
Applied Physics Letters. 76:2821-2823
Using a mixed type-I/type-II GaAs/AlAs multiple-quantum-well sample, we have demonstrated an optically controllable and tunable terahertz (THz) filter. Long-lived electron–hole pairs in the quantum wells allow for efficient THz attenuation over a l
Publikováno v:
Applied Physics Letters. 67:264-266
We investigated the ultrafast energy relaxation of photoexcited minority electrons in highly doped p‐GaAs by means of femtosecond time resolved luminescence (Δt
Publikováno v:
Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013).
Summary form only given. Mixed type-I/type-II GaAs/AlAs double quantum wells (QW) offer a means of generating electron-hole pairs with a lifetime which can exceed 400 /spl mu/s. For the sample chosen for the measurements discussed here, electrons exc