Zobrazeno 1 - 10
of 11
pro vyhledávání: '"N. E. Harff"'
Epoxy bond and stop-etch (EBASE) technique enabling backside processing of (Al)GaAs heterostructures
Autor:
N. E. Harff, W. E. Baca, H. C. Chui, Jerry A. Simmons, Marc E. Sherwin, M. A. Blount, Mark V. Weckwerth
Publikováno v:
Superlattices and Microstructures. 20:561-567
The epoxy bond and stop-etch (EBASE) technique enables both the frontside and the backside processing of very thin (∼3000A) GaAs/AlGaAs epitaxial layer structures. Using this technique, a conventionally processed epitaxial layer structure is invert
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf8cd26f179ec47caa134d2f72e1143c
https://doi.org/10.1006/spmi.1996.0115
https://doi.org/10.1006/spmi.1996.0115
Publikováno v:
Superlattices and Microstructures. 20:595-600
We report on our studies of magnetic breakdown (MB) in coupled GaAs/Al 0.3 Ga 0.7 As double quantum wells (DQWs) subject to crossed magnetic fields. MB is a failure of semiclassical theory that occurs when a magnetic field causes electrons to tunnel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b46d50670af75d29367f18af804847d
https://doi.org/10.1006/spmi.1996.0120
https://doi.org/10.1006/spmi.1996.0120
Publikováno v:
Physical Review Letters. 73:2256-2259
We observe a strong modulation of the low temperature in-plane conductance [ital G][sub [parallel]] of coupled quantum wells (QWs) by an in-plane magnetic field [ital B][sub [parallel]], and attribute this to an anticrossing of the two QW dispersion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1a2865b0b7c0fa4707e495b0919f5b0
https://doi.org/10.1103/physrevlett.73.2256
https://doi.org/10.1103/physrevlett.73.2256
Autor:
S. J. Allen, Peter Burke, Michael C. Wanke, Michael Lilly, Xomalin G. Peralta, N. E. Harff, J. P. Eisenstein, John L. Reno, Jerry A. Simmons
Publikováno v:
Applied Physics Letters. 81:1627-1629
Double-quantum-well field-effect transistors with a grating gate exhibit a sharply resonant, voltage tuned terahertz photoconductivity. The voltage tuned resonance is determined by the plasma oscillations of the composite structure. The resonant phot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5517809af6717c95c8606727a1adfc85
https://doi.org/10.1063/1.1497433
https://doi.org/10.1063/1.1497433
Publikováno v:
Applied Physics Letters. 68:208-210
We demonstrate the metalorganic chemical vapor deposition (MOCVD) growth of two‐dimensional electron gases (2DEGs) with electron mobilities up to 2.0×106 cm2/V s at 0.3 K. These are the highest mobilities to date for MOCVD materials, and were achi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::961f0a6cbc533955e9ec7105154bfbfe
https://doi.org/10.1063/1.116462
https://doi.org/10.1063/1.116462
Publikováno v:
Applied Physics Letters. 67:1911-1913
We demonstrate the metalorganic vapor phase epitaxy (MOVPE) growth of AlGaAs/GaAs two‐dimensional electron gases (2DEGs) with mobilities as high as 786 000 cm2/V s at a carrier density of 3.0×1011 cm−2 at 0.3 K. The mobility figures of merit (μ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::748d232eb4f5ab8cd0197953fd879773
https://doi.org/10.1063/1.114374
https://doi.org/10.1063/1.114374
Autor:
X. G. PERALTA, S. J. ALLEN, M. C. WANKE, N. E. HARFF, M. P. LILLY, J. A. SIMMONS, J. L. RENO, P. J. BURKE, J. P. EISENSTEIN, W. KNAP, Y. DENG, S. RUMYANTSEV, J.-Q. LÜ, M. S. SHUR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71af5f9266605bb28c56b4d7dc9168e8
https://doi.org/10.1142/9789812775535_0011
https://doi.org/10.1142/9789812775535_0011
Autor:
N. E. Harff, J.-Q. Lü, Peter Burke, Sergey L. Rumyantsev, J. P. Eisenstein, Xomalin G. Peralta, Michael Shur, Michael Lilly, John L. Reno, S. J. Allen, Jerry A. Simmons, Wojciech Knap, Michael Clement Wanke, Y. Deng
Publikováno v:
Frontiers in Electronics.
We demonstrate resonant detection of terahertz radiation by two-dimensional plasma waves in two field effect devices: a commercial field effect transistor (FET) and a double quantum well field effect transistor with a periodic grating gate. In both d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7628f5b490bbb49378dcbad800b2f684
https://doi.org/10.1142/9789812796912_0033
https://doi.org/10.1142/9789812796912_0033
Publikováno v:
Applied Physics Letters. 65:2326-2328
Using an integrated airbridge and submicrometer gate post technology, coupled quantum point contacts (QPCs) arranged in a parallel configuration were fabricated. The airbridge and gate post are fabricated by e‐beam lithography and Ti/Au evaporation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::034870dee060a0a3c770ad2c408048f9
https://doi.org/10.1063/1.112731
https://doi.org/10.1063/1.112731
Due to inter-quantum well tunneling, coupled double quantum wells (DQWs) contain an extra degree of electronic freedom in the growth direction, giving rise to new transport phenomena not found in single electron layers. This report describes work don
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c697a0d4a74ab4024c2a87a9ae1a510e
https://doi.org/10.2172/477761
https://doi.org/10.2172/477761